4

LM5111

SNVS300H – JULY 2004 – REVISED SEPTEMBER 2016

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Copyright © 2004–2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and

specifications.

7 Specifications

7.1 Absolute Maximum Ratings

see

(1) (2)

MIN

MAX

UNIT

VCC to VEE

−0.3

15

V

IN to VEE

−0.3

15

V

Maximum junction temperature, TJ(max)

150

°C

Storage temperature, Tstg

−55

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

2000

V

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

TJ

Operating junction temperature

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.4 Thermal Information

THERMAL METRIC(1)

LM5111

UNIT

D

(SOIC)

DGN

(MSOP-PowerPAD)

8 PINS

8 PINS

RθJA

Junction-to-ambient thermal resistance

112.2

50.7

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

54.6

56.6

°C/W

RθJB

Junction-to-board thermal resistance

53.1

35.9

°C/W

ψJT

Junction-to-top characterization parameter

9.4

5.3

°C/W

ψJB

Junction-to-board characterization parameter

52.5

35.6

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

4.4

°C/W