VGS - Gate-to-Source Voltage (V)

0

2

4

6

8

10

12

14

16

18

20

0

3

6

9

12

15

18

21

24

27

30

D007

TC = 25°C, I D = 12 A

TC = 125°C, I D = 12 A

Qg - Gate Charge (nC)

0

2

4

6

8

10

12

0

1

2

3

4

5

6

7

8

9

10

D004

ID = 12 A

VDS = 30 V

1

D

2

D

3

D

4

D

D

5

G

6

S

7

S

8

S

P0093-01

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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

CSD18543Q3A

SLPS633 – DECEMBER 2016

CSD18543Q3A 60-V N-Channel NexFET™ Power MOSFET

1

1 Features

1

•

Ultra-Low Qg and Qgd

•

Low RDS(on)

•

Low-Thermal Resistance

•

Avalanche Rated

•

Lead Free

•

RoHS Compliant

•

Halogen Free

•

SON 3.3-mm × 3.3-mm Plastic Package

2 Applications

•

Solid State Relay Switch

•

DC-DC Conversion

•

Secondary Side Synchronous Rectifier

•

Isolated Converter Primary Side Switch

•

Motor Control

3 Description

This

60-V,

8.1-mΩ,

SON

3.3-mm

×

3.3-mm

NexFET™ power MOSFET is designed to minimize

losses in power conversion applications.

Top View

.

.

Product Summary

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-Source Voltage

60

V

Qg

Gate Charge Total (10 V)

11.1

nC

Qgd

Gate Charge Gate-to-Drain

1.7

nC

RDS(on)

Drain-to-Source On Resistance

VGS = 4.5 V

12.0

m

Ω

VGS = 10 V

8.1

VGS(th)

Threshold Voltage

2.0

V

Device Information(1)

DEVICE

MEDIA

QTY

PACKAGE

SHIP

CSD18543Q3A

13-Inch Reel

2500

SON

3.30-mm × 3.30-mm

Plastic Package

Tape

and

Reel

CSD18543Q3AT

7-Inch Reel

250

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C

VALUE

UNIT

VDS

Drain-to-Source Voltage

60

V

VGS

Gate-to-Source Voltage

±20

V

ID

Continuous Drain Current (Package Limited)

35

A

Continuous Drain Current (Silicon Limited),

TC = 25°C

60

Continuous Drain Current(1)

12

IDM

Pulsed Drain Current(2)

156

A

PD

Power Dissipation(1)

2.8

W

Power Dissipation, TC = 25°C

66

TJ,

Tstg

Operating Junction,

Storage Temperature

–55 to 150

°C

EAS

Avalanche Energy, Single Pulse

ID = 33 A, L = 0.1 mH, RG = 25 Ω

55

mJ

(1) Typical RθJA = 45°C/W on a 1-in

2, 2-oz Cu pad on a

0.06-in thick FR4 PCB.

(2) Max RθJC = 1.9°C/W, pulse duration ≤ 100 μs, duty cycle ≤

1%.

RDS(on) vs VGS

Gate Charge