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ST10F271B bảng dữ liệu(PDF) 154 Page - STMicroelectronics

tên linh kiện ST10F271B
Giải thích chi tiết về linh kiện  16-bit MCU with 128 Kbyte Flash memory and 8/12 Kbyte RAM
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ST10F271B bảng dữ liệu(HTML) 154 Page - STMicroelectronics

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Electrical characteristics
ST10F271B/ST10F271E
154/180
The given values of CA do not include the stray capacitance of the package and of the
printed circuit board: the negative resistance values are calculated assuming additional 5pF
to the values in the table. The crystal shunt capacitance (C0) and the package capacitance
between XTAL1 and XTAL2 pins is globally assumed equal to 10pF.
The external resistance between XTAL1 and XTAL2 is not necessary, since already present
on the silicon.
24.8.12
32 kHz oscillator specifications
VDD = 5V ± 10%, VSS = 0V, TA = –40 to +125°C
1.
At power-on a high current biasing is applied for faster oscillation start-up. Once the oscillation is started,
the current biasing is reduced to lower the power consumption of the system.
2.
Not 100% tested, guaranteed by design characterization.
Figure 48.
32kHz crystal oscillator connection diagram
Table 72.
Main oscillator negative resistance (module)
CA = 15pF
CA = 25pF
CA = 35pF
min.
typ.
max.
min.
typ.
max.
min.
typ.
max.
4 MHz
545
Ω
1035
Ω
–
550
Ω
1050
Ω
–
430
Ω
850
Ω
–
8 MHz
240
Ω
450
Ω
–
170
Ω
350
Ω
–
120
Ω
250
Ω
–
Table 73.
32kHz oscillator characteristics
Symbol
Parameter
Conditions
Value
Unit
min.
typ.
max.
gm32
Oscillator Transconductance 1)
Start-up
20
31
50
µA/V
Normal run
8
17
30
µA/V
VOSC32 Oscillation Amplitude
2)
Peak to Peak
0.5
1.0
2.4
V
VAV32
Oscillation Voltage level 2)
Sine wave middle
0.7
0.9
1.2
V
tSTUP32 Oscillator Start-up Time
2)
Stable VDD
–15
s
CA
CA
crystal
ST10F271



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