ISC018N08NM6SC datasheet(6/15 Pages) INFINEON

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OptiMOS™ 6 Power‑Transistor, 80 V

ISC018N08NM6SC

Public

Datasheet

Revision 1.0

https://www.infineon.com

2025‑02‑17

Table 6 Gate charge characteristics 8)

Parameter

Symbol

Values

Unit Note / Test condition

Min.

Typ.

Max.

Gate to source charge 9)

‑

V =40 V, =25 A, =0 to 10 V

Gate charge at threshold 9)

13.5

16.2

Gate to drain charge 9)

12.7

17.8

Switching charge

‑

Gate charge total 9)

Gate plateau voltage

4.8

‑

Output charge 9)

‑

126

158

V =40 V, =0 V

See "Gate charge waveforms" for parameter definition

Defined by design. Not subject to production test.

Table 7 Reverse diode

Parameter

Symbol

Values

Unit Note / Test condition

Min.

Typ.

Max.

Diode continuous forward current

‑

197

T =25 °C

Diode pulse current

920

Diode forward voltage

‑

0.80

1.0

V =0 V, =50 A, =25 °C

Reverse recovery time 10)

‑

67.5

V =40 V, =25 A, d /d =100 A/μs

i t

Reverse recovery charge 10)

Reverse recovery time 10)

‑

V =40 V, =25 A, d /d =1000 A/μs

i t

Reverse recovery charge 10)

286

429

Defined by design. Not subject to production test.

10)

g(th)

plateau

oss

S,pulse

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