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FX3ASJ-3 bảng dữ liệu(PDF) 2 Page - Powerex Power Semiconductors |
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FX3ASJ-3 bảng dữ liệu(HTML) 2 Page - Powerex Power Semiconductors |
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2 / 4 page ![]() PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. Jan.1999 MITSUBISHI Pch POWER MOSFET FX3ASJ-3 HIGH-SPEED SWITCHING USE PERFORMANCE CURVES 0 10 20 30 40 50 0 200 50 100 150 –2 –3 –10–1 –5 –7 –100 –2 –3 –5 –7 –101 –2 –3 –5 –7 –101 –2 –102 –3 –5 –7 –2 –103 –3 –5 –7 –2 –2 –3 –5 –7 –2 tw = 10 µs TC = 25°C Single Pulse 100 µs 10ms 1ms DC 0 –2 –4 –6 –8 –10 0 –4 –8 –12 –16 –20 Tc = 25°C Pulse Test PD = 30W VGS = –10V –4V –3V –5V –6V 0 –1.0 –2.0 –3.0 –4.0 –5.0 0 –2–4–6–8 –10 –6V –4V PD = 30W VGS = –10V –3V –2.5V –5V Tc = 25°C Pulse Test POWER DISSIPATION DERATING CURVE CASE TEMPERATURE TC (°C) MAXIMUM SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE VDS (V) V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr V µA mA V Ω Ω V S pF pF pF ns ns ns ns V °C/W ns –150 — — –1.0 — — — — — — — — — — — — — — — — — –1.5 0.93 1.02 –0.93 3.0 1170 81 31 9 7 82 33 –1.0 — 80 — ±0.1 –0.1 –2.0 1.20 1.32 –1.20 — — — — — — — — –1.5 4.17 — ID = –1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = –150V, VGS = 0V ID = –1mA, VDS = –10V ID = –1A, VGS = –10V ID = –1A, VGS = –4V ID = –1A, VGS = –10V ID = –1A, VDS = –5V VDS = –10V, VGS = 0V, f = 1MHz VDD = –80V, ID = –1A, VGS = –10V, RGEN = RGS = 50 Ω IS = –1A, VGS = 0V Channel to case IS = –3A, dis/dt = 100A/ µs ELECTRICAL CHARACTERISTICS (Tch = 25 °C) Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol Unit Parameter Test conditions Limits Min. Typ. Max. |
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