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TPD2007F bảng dữ liệu(PDF) 5 Page - Toshiba Semiconductor

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TPD2007F bảng dữ liệu(HTML) 5 Page - Toshiba Semiconductor

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TPD2007F
2006-10-31
5
Electrical Characteristics
(Unless otherwise specified, Tj = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Drain-source clamp voltage
V (BR) DSS
―
ID = 10 mA, VIN = 0 V
40
―
―
V
Input voltage
Vth
―
VDS = 24 V, IDS = 1 mA
0.8
―
2.0
V
IIL
―
VIN = 0 V
−10
―
10
Input current
IIH
―
VIN = 5 V
―
140
300
μA
On resistance
RDS(ON)
―
VIN = 5 V, IO = 0.5 A
―
1.0
1.4
Ω
Off current
IDSS
―
VDS = 40V
―
―
100
μA
IS(1)
―
VDS = 12 V, VIN = 5 V,
RL = 3Ω
1
2
3
Overcurrent protection
IS(2)
―
VDS = 30 V, VIN = 5 V,
RL = 3Ω
0.7
―
2
A
Temperature
TSD
―
VIN = 5 V
―
160
―
Overtemperature
Protection
Hysteresis
ΔTSD
―
―
―
10
―
°C
tON
1
―
10
50
Switching time
tOFF
1
VDD = 12 V, RL = 24Ω,
VIN = 0 V / 5 V
―
10
50
μs
Operating input voltage
protection circuit
VIN(P)
―
―
3.9
―
6.0
V
Drain-source diode forward voltage
VDSF
―
IF = 1 A, VIN = 0 V
―
―
1.6
V
Description of Protector Circuit
(1)
Overtemperature Protection
• The overheating detector circuits feature hysteresis. After overheating is detected, normal operation
is restored only when the junction temperature falls by the hysteresis amount (10°C typ.) in relation
to the overheating detection temperature.
(2)
Overcurrent Protection
• When overcurrent is detected, the overcurrent limiter function limits the output current. Normal
operation is restored when the load current drops below the overcurrent detection value.
Test Circuit
Switching Time



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