TPD2007F

2006-10-31

4

Truth Table

Input Signal

Output Signal

State

L

H

H

L

Normal

L

H

H

Internally limited

Overcurrent protection

L

H

H

H

Overtemperature protection

Characteristic

Symbol

Rating

Unit

Drain-source voltage

40

V

Input voltage

−0.5 ~ 7

V

Output current

Internally

Limited

A

0.8

Power dissipation

(operating all channels, ta = 25°C)

1.2 (Note)

W

Single pulse avalanche energy

10

mJ

Operating temperature

−40 ~ 85

°C

Junction temperature

150

°C

Storage temperature

−55 ~ 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Thermal Characteristics

Characteristic

Symbol

Rating

Unit

156.3

Thermal resistance junction to

ambient

(operating all channels, ta = 25°c)

104.2 (Note)

°C / W

Note: 60 mm × 60 mm × 1.6 mm when mounted on a glass epoxy PCB (DC)