GD50PIX170C6S datasheet(6/13 Pages) STARPOWER

6 / 13 page

GD50PIX170C6S

IGBT Module

1/21/2019

6/13

Preliminary

Diode-brake Characteristics T

C=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Diode Forward

Voltage

IF=50A,VGE=0V,Tj=25

1.80

2.25

IF=50A,VGE=0V,Tj=125

1.90

IF=50A,VGE=0V,Tj=150

1.95

Recovered Charge

VR=900V,IF=50A,

-di/dt=1775A/

μs,V

GE=-15V

Tj=25

8.9

μC

IRM

Peak Reverse

Recovery Current

Erec

Reverse Recovery

Energy

4.89

Recovered Charge

VR=900V,IF=50A,

-di/dt=1775A/

μs,V

GE=-15V

Tj=125

16.9

μC

IRM

Peak Reverse

Recovery Current

Erec

Reverse Recovery

Energy

9.7

Recovered Charge

VR=900V,IF=50A,

-di/dt=1775A/

μs,V

GE=-15V

Tj=150

18.7

μC

IRM

Peak Reverse

Recovery Current

Erec

Reverse Recovery

Energy

11.9

NTC Characteristics T

C=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

R25

Rated Resistance

5.0

∆R/R

Deviation of R100

TC=100

oC,R

100

=493.3Ω

-5

P25

Power

Dissipation

20.0

B25/50

B-value

R2=R25exp[B25/50(1/T2-

1/(298.15K))]

3375

B25/80

B-value

R2=R25exp[B25/80(1/T2-

1/(298.15K))]

3411

B25/100

B-value

R2=R25exp[B25/100(1/T2-

1/(298.15K))]

3433

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