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GD50PIX170C6S bảng dữ liệu(PDF) 3 Page - StarPower Europe AG

tên linh kiện GD50PIX170C6S
Giải thích chi tiết về linh kiện  1700V/50A PIM in one-package
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nhà sản xuất  STARPOWER [StarPower Europe AG]
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GD50PIX170C6S bảng dữ liệu(HTML) 3 Page - StarPower Europe AG

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GD50PIX170C6S
IGBT Module
©2019 STARPOWER Semiconductor Ltd.
1/21/2019
3/13
Preliminary
IGBT-inverter Characteristics T
C=25
oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VCE(sat)
Collector to Emitter
Saturation Voltage
IC=50A,VGE=15V,
Tj=25
oC
1.85
2.20
V
IC=50A,VGE=15V,
Tj=125
oC
2.25
IC=50A,VGE=15V,
Tj=150
oC
2.35
VGE(th)
Gate-Emitter Threshold
Voltage
IC=2.0mA,VCE=VGE,
Tj=25
oC
5.6
6.2
6.8
V
ICES
Collector Cut-Off
Current
VCE=VCES,VGE=0V,
Tj=25
oC
5.0
mA
IGES
Gate-Emitter Leakage
Current
VGE=VGES,VCE=0V,
Tj=25
oC
400
nA
RGint
Internal Gate Resistance
9.5
Ω
Cies
Input Capacitance
VCE=25V,f=1MHz,
VGE=0V
6.02
nF
Cres
Reverse Transfer
Capacitance
0.15
nF
QG
Gate Charge
VGE=-15…+15V
0.47
μC
td(on)
Turn-On Delay Time
VCC=900V,IC=50A,
RG=9.6
Ω,V
GE=±15V,
Tj=25
oC
187
ns
tr
Rise Time
31
ns
td(off)
Turn-Off Delay Time
434
ns
tf
Fall Time
363
ns
Eon
Turn-On Switching
Loss
9.25
mJ
Eoff
Turn-Off Switching
Loss
10.4
mJ
td(on)
Turn-On Delay Time
VCC=900V,IC=50A,
RG=9.6
Ω,V
GE=±15V,
Tj=125
oC
194
ns
tr
Rise Time
44
ns
td(off)
Turn-Off Delay Time
503
ns
tf
Fall Time
637
ns
Eon
Turn-On Switching
Loss
15.2
mJ
Eoff
Turn-Off Switching
Loss
16.1
mJ
td(on)
Turn-On Delay Time
VCC=900V,IC=50A,
RG=9.6
Ω,V
GE=±15V,
Tj=150
oC
202
ns
tr
Rise Time
55
ns
td(off)
Turn-Off Delay Time
512
ns
tf
Fall Time
720
ns
Eon
Turn-On Switching
Loss
16.5
mJ
Eoff
Turn-Off Switching
Loss
17.4
mJ
ISC
SC Data
tP
≤10μs,V
GE=15V,
Tj=150
oC,V
CC=1000V,
VCEM
≤1700V
200
A



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