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GD50PIX120C5SN bảng dữ liệu(PDF) 5 Page - StarPower Europe AG

tên linh kiện GD50PIX120C5SN
Giải thích chi tiết về linh kiện  1200V/50A PIM in one-package
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GD50PIX120C5SN bảng dữ liệu(HTML) 5 Page - StarPower Europe AG

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GD50PIX120C5SN
IGBT Module
©2020 STARPOWER Semiconductor Ltd.
2/18/2020
5/13
Preliminary
IGBT-brake Characteristics T
C=25
oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VCE(sat)
Collector to Emitter
Saturation Voltage
IC=25A,VGE=15V,
Tj=25
oC
1.75
2.10
V
IC=25A,VGE=15V,
Tj=125
oC
2.00
IC=25A,VGE=15V,
Tj=150
oC
2.05
VGE(th)
Gate-Emitter Threshold
Voltage
IC=1.00mA,VCE=VGE,
Tj=25
oC
5.6
6.2
6.8
V
ICES
Collector Cut-Off
Current
VCE=VCES,VGE=0V,
Tj=25
oC
5.0
mA
IGES
Gate-Emitter Leakage
Current
VGE=VGES,VCE=0V,
Tj=25
oC
400
nA
RGint
Internal Gate Resistance
0
Ω
Cies
Input Capacitance
VCE=25V,f=1MHz,
VGE=0V
2.59
nF
Cres
Reverse Transfer
Capacitance
0.07
nF
QG
Gate Charge
VGE=-15…+15V
0.19
μC
td(on)
Turn-On Delay Time
VCC=600V,IC=25A,
RG=20
Ω,V
GE=±15V,
Tj=25
oC
22
ns
tr
Rise Time
14
ns
td(off)
Turn-Off Delay Time
186
ns
tf
Fall Time
176
ns
Eon
Turn-On Switching
Loss
1.37
mJ
Eoff
Turn-Off Switching
Loss
1.42
mJ
td(on)
Turn-On Delay Time
VCC=600V,IC=25A,
RG=20
Ω,V
GE=±15V,
Tj=125
oC
22
ns
tr
Rise Time
17
ns
td(off)
Turn-Off Delay Time
274
ns
tf
Fall Time
205
ns
Eon
Turn-On Switching
Loss
2.06
mJ
Eoff
Turn-Off Switching
Loss
2.10
mJ
td(on)
Turn-On Delay Time
VCC=600V,IC=25A,
RG=20
Ω,V
GE=±15V,
Tj=150
oC
22
ns
tr
Rise Time
18
ns
td(off)
Turn-Off Delay Time
294
ns
tf
Fall Time
216
ns
Eon
Turn-On Switching
Loss
2.22
mJ
Eoff
Turn-Off Switching
Loss
2.30
mJ
ISC
SC Data
tP
≤10μs,V
GE=15V,
Tj=150
oC,V
CC=900V,
VCEM
≤1200V
100
A



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