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GD50PIX120C5SN bảng dữ liệu(PDF) 3 Page - StarPower Europe AG |
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GD50PIX120C5SN bảng dữ liệu(HTML) 3 Page - StarPower Europe AG |
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3 / 13 page ![]() GD50PIX120C5SN IGBT Module ©2020 STARPOWER Semiconductor Ltd. 2/18/2020 3/13 Preliminary IGBT-inverter Characteristics T C=25 oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit VCE(sat) Collector to Emitter Saturation Voltage IC=50A,VGE=15V, Tj=25 oC 1.75 2.20 V IC=50A,VGE=15V, Tj=125 oC 2.00 IC=50A,VGE=15V, Tj=150 oC 2.05 VGE(th) Gate-Emitter Threshold Voltage IC=1.80mA,VCE=VGE, Tj=25 oC 5.6 6.2 6.8 V ICES Collector Cut-Off Current VCE=VCES,VGE=0V, Tj=25 oC 5.0 mA IGES Gate-Emitter Leakage Current VGE=VGES,VCE=0V, Tj=25 oC 400 nA RGint Internal Gate Resistance 0 Ω Cies Input Capacitance VCE=25V,f=1MHz, VGE=0V 4.66 nF Cres Reverse Transfer Capacitance 0.13 nF QG Gate Charge VGE=-15…+15V 0.35 μC td(on) Turn-On Delay Time VCC=600V,IC=50A, RG=15 Ω,V GE=±15V, Tj=25 oC 137 ns tr Rise Time 26 ns td(off) Turn-Off Delay Time 323 ns tf Fall Time 78 ns Eon Turn-On Switching Loss 4.88 mJ Eoff Turn-Off Switching Loss 2.74 mJ td(on) Turn-On Delay Time VCC=600V,IC=50A, RG=15 Ω,V GE=±15V, Tj=125 oC 146 ns tr Rise Time 34 ns td(off) Turn-Off Delay Time 421 ns tf Fall Time 147 ns Eon Turn-On Switching Loss 6.59 mJ Eoff Turn-Off Switching Loss 4.21 mJ td(on) Turn-On Delay Time VCC=600V,IC=50A, RG=15 Ω,V GE=±15V, Tj=150 oC 146 ns tr Rise Time 34 ns td(off) Turn-Off Delay Time 441 ns tf Fall Time 166 ns Eon Turn-On Switching Loss 7.19 mJ Eoff Turn-Off Switching Loss 4.69 mJ ISC SC Data tP ≤10μs,V GE=15V, Tj=150 oC,V CC=900V, VCEM ≤1200V 200 A |
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