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M58PR512LE bảng dữ liệu(PDF) 67 Page - STMicroelectronics

tên linh kiện M58PR512LE
Giải thích chi tiết về linh kiện  256-Mbit, 512-Mbit or 1-Gbit (횞 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
PDF  119 Pages
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
Trang chủ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58PR512LE bảng dữ liệu(HTML) 67 Page - STMicroelectronics

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M58PR256LE, M58PR512LE, M58PR001LE
Program and erase times and endurance cycles
67/119
Erase
EFA block (4 KWord)
0.7
2.5
s
Main array block (128 KWord)
0.9
4
s
Program(3)
Single cell(4)
Word Program(5)
50
230
µs
Single word(4)
Word Program(5)
50
230
µs
Buffer Enhanced
Factory
Program(4)
4.2
µs
Buffer (512
words)
Buffer Program
2.15
4.3
ms
Buffer Enhanced
Factory Program
2.15
ms
Main block
(128 KWords)
Buffer Program
0.55
1.1
s
Buffer Enhanced
Factory Program
0.55
s
EFA block (4 KWords)
0.2
0.94
Program/Erase
cycles (per block)
Main array block (128 KWords)
100 000
cycles
EFA block (4 KWords)
100 000
Blank Check
Main array block
3.2
ms
1.
TA = –30 to 85 °C; VDD = 1.7 V to 2 V; VDDQ = 1.7 V to 2 V.
2.
Values are liable to change with the external system-level overhead (command sequence and Status
Register polling execution).
3.
Excludes the time needed to execute the command sequence.
4.
This is an average value on the entire device.
5.
The first Word Program in a program region will take 115 µs, the subsequent words will take 50 µs to
program.
Table 23.
Program/erase times and endurance cycles(1) (2) (continued)
Parameter
Condition
Min
Typ
Typical after
100 kW/E
cycles
Max
Unit



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