TISP7125F3D datasheet(18/25 Pages) POINN

18 / 25 page

TISP7125F3, TISP7150F3, TISP7180F3, TISP7240F3, TISP7260F3,

TISP7290F3, TISP7320F3, TISP7350F3, TISP7380F3

TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

MARCH 1994 - REVISED MARCH 2000

P R OD UCT

INFORM A T ION

If the impulse generator current exceeds the protectors current rating then a series resistance can be used to

reduce the current to the protectors rated value and so prevent possible failure. The required value of series

resistance for a given waveform is given by the following calculations. First, the minimum total circuit

impedance is found by dividing the impulse generators peak voltage by the protectors rated current. The

impulse generators fictive impedance (generators peak voltage divided by peak short circuit current) is then

subtracted from the minimum total circuit impedance to give the required value of series resistance. In some

cases the equipment will require verification over a temperature range. By using the derated waveform values

from the thermal information section, the appropriate series resistor value can be calculated for ambient

temperatures in the range of 0 °C to 70 °C.

protection voltage

The protection voltage, (V(BO) ), increases under lightning surge conditions due to thyristor regeneration. This

increase is dependent on the rate of current rise, di/dt, when the TISP® is clamping the voltage in its

breakdown region. The V(BO) value under surge conditions can be estimated by multiplying the 50 Hz rate

V(BO) (250 V/ms) value by the normalised increase at the surge’s di/dt. An estimate of the di/dt can be made

from the surge generator voltage rate of rise, dv/dt, and the circuit resistance.

As an example, the ITU-T recommendation K.21 1.5 kV, 10/700 surge has an average dv/dt of 150 V/µs, but,

as the rise is exponential, the initial dv/dt is three times higher, being 450 V/µs. The instantaneous generator

output resistance is 25

Ω. If the equipment has an additional series resistance of 20 Ω, the total series

resistance becomes 45

Ω. The maximum di/dt then can be estimated as 450/45 = 10 A/µs. In practice the

measured

di/dt and protection voltage increase will be lower due to inductive effects and the finite slope

resistance of the TISP® breakdown region.

capacitance

off-state capacitance

The off-state capacitance of a TISP® is sensitive to junction temperature, TJ , and the bias voltage,

comprising of the dc voltage, VD , and the ac voltage, Vd . All the capacitance values in this data sheet are

measured with an ac voltage of 1 V rms. When VD >> Vd the capacitance value is independent on the value

of Vd . Up to 10 MHz the capacitance is essentially independent of frequency. Above 10 MHz the effective

capacitance is strongly dependent on connection inductance. For example, a printed wiring (PW) trace of

10 cm could create a circuit resonance with the device capacitance in the region of 80 MHz.

STANDARD

PEAK VOLTAGE

SETTING

VOLTAGE

WAVE FORM

µs

PEAK CURRENT

VALUE

CURRENT

WAVE FORM

µs

TISP7xxxF3

25 °C RATING

SERIES

RESISTANCE

Ω

COORDINATION

RESISTANCE

Ω (MIN.)

GR-1089-CORE

2500

2/10

2 x 500

2/10

2 x 190

1000

10/1000

2 x 100

10/1000

2 x 45

FCC Part 68

(March 1998)

1500

10/160

200

10/160

110

800

10/560

100

10/560

1000

1500

9/720 †

(SINGLE)

(DUAL)

37.5

2x 27

5/320 †

4/250

2x95

I 31-24

1500

0.5/700

37.5

0.2/310

ITU-T K20/K21

1000

1500

4000

10/700

(SINGLE)

(DUAL)

37.5

100

2x 72

5/310

4/250

2x95

† FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K21 10/700 impulse generator

NA = Not Applicable, primary protection removed or not specified.

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