TISP4160LP datasheet(2/7 Pages) POINN

2 / 7 page

TISP4160LP, TISP4180LP

SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

APRIL 1987 - REVISED SEPTEMBER 1997

PRODUCT

INFORMATION

absolute maximum ratings at

25°C case temperature (unless otherwise noted)

NOTES: 1. Above 70°C, derate linearly to zero at 150°C case temperature

2. This value applies when the initial case temperature is at (or below) 70°C. The surge may be repeated after the device has

returned to thermal equilibrium.

3. Most PTT’s quote an unloaded voltage waveform. In operation the TISP essentially shorts the generator output. The resulting

loaded current waveform is specified.

NOTES: 4. These parameters must be measured using pulse techniques, tw = 100 µs, duty cycle ≤ 2%.

5. These parameters are measured with voltage sensing contacts seperate from the current carrying contacts located within 3.2 mm

(0.125 inch) from the device body.

6. Linear rate of rise, maximum voltage limited to 80 % VZ (minimum).

RATING

SYMBOL

VALUE

UNIT

Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)

ITSP

8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs)

100

5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs)

0.2/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs)

5/310 µs (CCITT IX K17, open-circuit voltage wave shape 1.5 kV, 10/700 µs)

Non-repetitive peak on-state current, 50 Hz, 1 s (see Notes 1 and 2)

ITSM

2.5

A rms

Initial rate of rise of on-state current,

Linear current ramp, Maximum ramp value < 38 A

diT/dt

250

A/µs

Junction temperature

150

°C

Operating free - air temperature range

0 to 70

°C

Storage temperature range

Tstg

-40 to +150

°C

Lead temperature 1.5 mm from case for 10 s

Tlead

260

°C

electrical characteristics, TJ = 25°C

PARAMETER

TEST CONDITIONS

TISP4160

TISP4180

UNIT

MIN

TYP

MAX

MIN

TYP

MAX

Reference zener

voltage

IZ = ± 1mA

± 120

± 145

∝

Temperature coefficient

of reference voltage

0.1

%/oC

V(BO)

Breakover voltage

(see Notes 4 and 5)

± 160

± 180

I(BO)

Breakover current

(see Note 4)

± 0.15

± 0.6 ± 0.15

± 0.6

VTM

Peak on-state voltage

IT = ± 5 A

(see Notes 4 and 5)

± 2.2

± 3

± 2.2

± 3

Holding current

(see Note 4)

± 150

dv/dt

Critical rate of rise of

off-state voltage

(see Note 6)

± 5

kV/

µs

Off-state leakage

current

VD = ± 50 V

± 10

µA

Coff

Off-state capacitance

VD = 0

f = 1 kHz

150

thermal characteristics

PARAMETER

MIN

TYP

MAX

UNIT

RθJA

Junction to free air thermal resistance

156

°C/W

TISP4160LP bảng dữ liệu(PDF) 2 Page - Power Innovations Ltd

TISP4160LP bảng dữ liệu(HTML) 2 Page - Power Innovations Ltd

Html Pages

1 2 3 4 5 6 7

bảng dữ liệu tải về

Link URL