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PIC16F87 bảng dữ liệu(PDF) 9 Page - Microchip Technology

tên linh kiện PIC16F87
Giải thích chi tiết về linh kiện  Flash Memory Programming Specification
PDF  24 Pages
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nhà sản xuất  MICROCHIP [Microchip Technology]
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 2002 Microchip Technology Inc.
DS39607B-page 9
PIC16F87/88
3.4.2.7
Begin Erase (Program and Data
Memory)
The erase block size for program memory is 32 words
(row) and 1 word for data memory. The row or word to
be programmed must first be erased. This is done by
setting the pointer to a location in the row or word and
then performing a ‘Begin Erase’ command. The row or
word is then erased. The user must allow the combined
time for row erase and programming, as specified in
the electrical specifications, for programming to
complete. This is an externally timed event.
The internal timer is not used for this command, so the
‘End Programming’ command must be used to stop
erase.
A timing diagram for this command is shown in
Figure 7-6.
3.4.2.8
Begin Programming Only
Programming of program and data memory will begin
once this command is received and decoded. The
user must allow the time for programming, as specified
in the electrical specifications, for programming to
complete. An ‘End Programming’ command is
required.
The internal timer is not used for this command, so the
‘End Programming’ command must be used to stop
programming.
1.
If the address is pointing to user memory, the
user memory alone will be affected.
2.
If the address is pointing to the physically
implemented configuration memory (2000h-
2008h), the configuration memory will be
written. The configuration words will not be
written unless the address is specifically
pointing to the corresponding address.
A timing diagram for this command is shown in
Figure 7-7.
3.4.2.9
End Programming
After receiving this command, the chip stops
programming the memory (configuration memory or
user program memory) that it was programming at the
time.
TABLE 3-1:
COMMAND MAPPING FOR PIC16F87/88
Note 1: The code-protect bits cannot be erased
with this command.
2: All ‘Begin Erase’ operations can take
place over the entire VDD range.
Note:
This command will also set the write data
shift latches to all ‘1’s to avoid issues with
downloading only one word before the
write.
Command
Mapping (MSB … LSB)
Data
Voltage Range
Load Configuration
00000
0, data (14), 0
2.0V-5.5V
Load Data for Program Memory
00010
0, data (14), 0
2.0V-5.5V
Read Data from Program Memory
00100
0, data (14), 0
2.0V-5.5V
Increment Address
00110
2.0V-5.5V
Begin Erase
01000
externally timed
2.0V-5.5V
Begin Programming Only Cycle
11000
externally timed
2.0V-5.5V
Bulk Erase Program Memory
01001
externally timed
4.5V-5.5V
Bulk Erase Data Memory
01011
externally timed
4.5V-5.5V
Chip Erase
11111
internally timed
4.5V-5.5V
Load Data for Data Memory
00011
0, zeroes (6),
data (8), 0
2.0V-5.5V
Read Data from Data Memory
00101
0, zeroes (6),
data (8), 0
2.0V-5.5V
End Programming
10111



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