Electrical Characteristics (TJ=25℃ unless otherwise specified)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Off Characteristic

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID= -250μA

-30

-

-

V

IDSS

Zero Gate Voltage Drain Current

VDS= -30V, VGS=0V,

-

-

-1

μA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS= ±20V

-

-

±100

nA

On Characteristics

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID= -250μA

-1.0

-1.5

-2.5

V

RDS(on)

Static Drain-Source on-Resistance

note3

VGS= -10V, ID= -30A

-

5.3

mΩ

VGS= -4.5V, ID= -20A

-

8.2

Dynamic Characteristics

Ciss

Input Capacitance

VDS= -15V, VGS=0V,

f=1.0MHz

-

9400

-

pF

Coss

Output Capacitance

-

1000

-

pF

Crss

Reverse Transfer Capacitance

-

767

-

pF

Qg

Total Gate Charge

VDS= -15V, ID= -30A,

VGS= -10V

-

42

-

nC

Qgs

Gate-Source Charge

-

8.4

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

11.2

-

nC

Switching Characteristics

td(on)

Turn-on Delay Time

VDD= -15V, ID= -30A,

VGS= -10V, RGEN=2.5Ω

-

15

-

ns

tr

Turn-on Rise Time

-

16

-

ns

td(off)

Turn-off Delay Time

-

69

-

ns

tf

Turn-off Fall Time

-

27

-

ns

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain to Source Diode Forward

Current

-

-

-100

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

-400

A

VSD

Drain to Source Diode Forward

Voltage

VGS=0V, IS= -30A

-

-0.8

-1.2

V

Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

2. EAS condition: TJ=25℃, VDD= -15V, VG= -10V, RG=25Ω, L=0.5mH, IAS= -30A

3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

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SUD45P03-09-GE3

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