RM150N80DF datasheet(1/7 Pages) RECTRON

tên linh kiện	RM150N80DF

Giải thích chi tiết về linh kiện	N-Channel Enhancement Mode Power MOSFET

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Features

z 80V,150A

RDS ON

3.0m

VGS=10V

TYP:2.5m

RDS ON

4.0m

VGS=6V

TYP:3.5m

z Surface-mounted package

z Split Gate Trench Technology

Applications

z Power appliances

z BMS appliances

z High power inverter system

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity (PCS)

150N80

RM150N80DF

DFN5X6

-

5000

ABSOLUTE MAXIMUM RATINGS (Ta=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDS

80

V

Gate-Source Voltage

VGS

20

V

Continuous Drain Current (Ta =25

) (2,3)

ID

150

A

Pulsed Drain Current (1,2,3)

IDM

240

A

Single Pulsed Avalanche Energy (VDD =50V,L=0.1mH) (2)

EAS

420

mJ

Drain Power Dissipation

PD

156

W

Thermal Resistance from Junction to Case(2)

RθJC

0.8

/W

Thermal Resistance- Junction to Ambient(2)

RθJA

62.5

/W

Junction Temperature

TJ

150

Storage Temperature

TSTG

-55~ +150

Notes:

1. Pulse width

d 300 Ps, duty cycle d 2 %

2. Surface Mounted on n 1 in2 pad area, t

d 10 sec.

3. Limited by bonding wire

DFN5X6

N-Channel Enhancement Mode Power MOSFET

RM150N80DF

Halogen-free

z

2023-03/59

REV:O

Số phần tương tự - RM150N80DF

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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Mô tả tương tự - RM150N80DF

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