UTG4N65L-TN3-R datasheet(3/4 Pages) UTC

3 / 4 page

UTG4N65-S

Preliminary

Insulated Gate Bipolar Transistor

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R203-107.a



ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Off Characteristics

Collector-Emitter Breakdown Voltage

BVCES

650

Collector Cut-Off Current

ICES

VCE=650V, VGE=0V

μA

G-E Leakage Current

IGES

VCE=0V, VGE=±20V

±100

On Characteristics

Gate to Emitter Threshold Voltage

VGE(TH)

IC=250μA, VCE=VGE

4.0

6.5

Collector to Emitter Saturation Voltage

VCE(SAT)

IC=4.0A, VGE=15V

TC=25°C

1.44

2.1

TC=125°C

1.8

Dynamic Characteristics

Input Capacitance

CIES

VCE=25V, VGE=0V, f=1MHz

433

Output Capacitance

COES

31.5

Reverse Transfer Capacitance

CRES

7.7

Switching Characteristics

Total Gate Charge

VCE=520V, IC=4.0A, VGE=15V

41.2

Gate-Emitter Charge

QGE

13.7

Gate-Collector Charge

QGC

16.3

Turn-On Delay Time

tDON)

VCC=400V, IC=4.0A, RG=5Ω,

VGE=0~15V, L=1000μH

Rise Time

Turn-Off Delay Time

tDOFF)

Fall Time

290

Turn-On Switching Loss

EON

0.154

Turn-Off Switching Loss

EOFF

0.147

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Forward Voltage Drop

IF=4.0A

1.49

3.0

Reverse Recovery Time

trr

IF=4.0A, dI/dt=100A/μS,

VCC=400V

38.1

Reverse Recovery Charge

Qrr

29.6

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