ISC044N15NM6 datasheet(5/13 Pages) INFINEON

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OptiMOS™ 6 Power‑Transistor, 150 V

ISC044N15NM6

Public

Datasheet

Revision 2.0

https://www.infineon.com

2024‑04‑23

Table 6 Gate charge characteristics 7)

Parameter

Symbol

Values

Unit Note/ Test Condition

Min. Typ. Max.

Gate to source charge 8)

‑

21 27 nC

V =75 V, =25 A, =0 to 10 V

Gate charge at threshold

‑

13.6 ‑

V =75 V, =25 A, =0 to 10 V

Gate to drain charge 8)

‑

12.5 18.8 nC

V =75 V, =25 A, =0 to 10 V

Switching charge

‑

19.5 ‑

V =75 V, =25 A, =0 to 10 V

Gate charge total 8)

‑

55 72 nC

V =75 V, =25 A, =0 to 10 V

Gate plateau voltage

‑

5.3 ‑

V =75 V, =25 A, =0 to 10 V

Gate charge total, sync. FET

‑

46 ‑

V =0.1 V, =0 to 10 V

Output charge 8)

‑

163 212 nC

V =75 V, =0 V

See "Gate charge waveforms" for parameter definition

Defined by design. Not subject to production test.

Table 7 Reverse diode

Parameter

Symbol

Values

Unit Note/ Test Condition

Min. Typ. Max.

Diode continuous forward current

‑

156 A

T =25 °C

Diode pulse current

‑

624 A

T =25 °C

Diode forward voltage

‑

0.83 1.0 V

V =0 V, =50 A, =25 °C

Reverse recovery time 9)

‑

33 66 ns

V =75 V, =25 A, d /d =500 A/μs

i t

Reverse recovery charge 9)

‑

137 274 nC

V =75 V, =25 A, d /d =500 A/μs

i t

Reverse recovery time 9)

‑

29 58 ns

V =75 V, =25 A, d /d =1000 A/μs

i t

Reverse recovery charge 9)

‑

274 548 nC

V =75 V, =25 A, d /d =1000 A/μs

i t

Defined by design. Not subject to production test.

g(th)

plateau

g(sync)

oss

S,pulse

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