ISC044N15NM6 datasheet(4/13 Pages) INFINEON

4 / 13 page

OptiMOS™ 6 Power‑Transistor, 150 V

ISC044N15NM6

Public

Datasheet

Revision 2.0

https://www.infineon.com

2024‑04‑23

3 Electrical characteristics

at =25 °C, unless otherwise specified

Table 4 Static characteristics

Parameter

Symbol

Values

Unit Note/ Test Condition

Min. Typ. Max.

Drain‑source breakdown voltage

150 ‑

‑

V =0 V, =1 mA

Gate threshold voltage

3.0 3.5 4.0 V

V = , =140 μA

V I

Zero gate voltage drain current

‑

0.1

100 μA

V =120 V, =0 V, =25 °C

=120 V, =0 V, =125 °C

Gate‑source leakage current

‑

10 100 nA

V =20 V, =0 V

Drain‑source on‑state resistance

‑

3.5

3.8

4.3

4.2

4.4

5.1

mΩ

V =15 V, =50 A

=10 V, =50 A

=8 V, =25 A

Gate resistance

‑

0.86 1.29 Ω

‑

Transconductance

48 97 ‑

| |≥2| |

, =50 A

I R

Table 5 Dynamic characteristics

Parameter

Symbol

Values

Unit Note/ Test Condition

Min. Typ. Max.

Input capacitance 6)

‑

3900 5100 pF

V =0 V, =75 V, =1 MHz

Output capacitance 6)

‑

1200 1600 pF

V =0 V, =75 V, =1 MHz

Reverse transfer capacitance 6)

‑

V =0 V, =75 V, =1 MHz

Turn‑on delay time

‑

V =75 V, =10 V, =25 A,

=1.

6 Ω

Rise time

‑

V =75 V, =10 V, =25 A,

=1.

6 Ω

Turn‑off delay time

‑

V =75 V, =10 V, =25 A,

=1.

6 Ω

Fall time

‑

V =75 V, =10 V, =25 A,

=1.

6 Ω

Defined by design. Not subject to production test.

(BR)DSS

GS(th)

GS D

DSS

GSS

DS(on)

D DS(on)max D

iss

oss

rss

d(on)

G,ext

d(off)

G,ext

ISC044N15NM6 bảng dữ liệu(PDF) 4 Page - Infineon Technologies AG

ISC044N15NM6 bảng dữ liệu(HTML) 4 Page - Infineon Technologies AG

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

bảng dữ liệu tải về

Link URL