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APTC60DAM18CTG bảng dữ liệu(PDF) 1 Page - Microsemi Corporation |
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APTC60DAM18CTG bảng dữ liệu(HTML) 1 Page - Microsemi Corporation |
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1 / 7 page  APTC60DAM18CTG www.microsemi.com 1 – 7 CR1 VBUS NTC2 0/VBU S VBUS SENSE G2 S2 NTC1 Q2 OUT VBUS OUT OUT NTC2 NTC1 0/VBUS S2 S2 G2 G2 VBUS SENSE Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 600 V Tc = 25°C 143 ID Continuous Drain Current Tc = 80°C 107 IDM Pulsed Drain current 572 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 18 m Ω PD Maximum Power Dissipation Tc = 25°C 833 W IAR Avalanche current (repetitive and non repetitive) 20 A EAR Repetitive Avalanche Energy 1 EAS Single Pulse Avalanche Energy 1800 mJ VDSS = 600V RDSon = 18mΩ max @ Tj = 25°C ID = 143A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated • FWD SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS compliant Boost chopper SiC FWD diode Super Junction MOSFET Power Module |
Số phần tương tự - APTC60DAM18CTG |
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Mô tả tương tự - APTC60DAM18CTG |
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