APTC60DAM18CTG datasheet(7/7 Pages) MICROSEMI

tên linh kiện	APTC60DAM18CTG

Giải thích chi tiết về linh kiện	Boost chopper SiC FWD diode Super Junction MOSFET Power Module

PDF	7 Pages

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nhà sản xuất	MICROSEMI [Microsemi Corporation]

Trang chủ	http://www.microsemi.com

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7 / 7 page

APTC60DAM18CTG

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Typical SiC Diode Performance Curve

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0.05

0.1

0.15

0.2

0.25

0.3

0.00001

0.0001

0.001

0.01

0.1

Rectangular Pulse Duration (Seconds)

Forward Characteristics

TJ=25°C

TJ=75°C

TJ=125°C

TJ=175°C

100

150

200

00.511.522.5

33.5

VF Forward Voltage (V)

Reverse Characteristics

TJ=25°C

TJ=75°C

TJ=125°C

TJ=175°C

500

1000

1500

2000

200

300

400

500

600

700

800

VR Reverse Voltage (V)

Capacitance vs.Reverse Voltage

1000

2000

3000

4000

100

1000

VR Reverse Voltage

“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon

Technologies AG”.

Microsemi reserves the right to change, without notice, the specifications and information contained herein

Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522

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