5.5 Electrical Characteristics (continued)

at TA = 25°C, V+ = 1.8V, 3.3V, and 5V, V– = 0V, VCM = VO = VS / 2, and RL > 1 MΩ (unless otherwise noted)(1)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

POWER SUPPLY

IS

Supply current

VCM = V– + 0.3 V

V+ = 1.8V

345

400

nA

V+ = 1.8V, TA = –40°C to +125°C

580

nA

V+ = 3.3V

346

400

nA

V+ = 3.3V, TA = –40°C to +125°C

600

nA

V+ = 5V

351

400

nA

V+ = 5V, TA = –40°C to +125°C

620

nA

VCM = V+ – 0.3 V

V+ = 1.8V

472

600

nA

V+ = 1.8V, TA = –40°C to +125°C

850

nA

V+ = 3.3V

471

600

nA

V+ = 3.3V, TA = –40°C to +125°C

860

nA

V+ = 5V

475

600

nA

V+ = 5V, TA = –40°C to +125°C

870

nA

NOISE IMMUNITY

EMIRR

EMI rejection ratio,

IN+ and IN– (4)

V+ = 5V,

VRF_PEAK = 100mVP (–20dBP)

f = 400MHz

121

dB

f = 900MHz

121

f = 1800MHz

124

f = 2400MHz

142

(1)

Electrical Characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result

in very limited self-heating of the device such that TJ = TA. No min and max specifications of parametric performance are indicated in

the electrical tables under conditions of internal self-heating where TJ > TA. Absolute Maximum Ratings indicate junction temperature

limits beyond which the device may be permanently degraded, either mechanically or electrically.

(2)

The offset voltage average drift is determined by dividing the change in VOS at the temperature extremes by the total temperature

change.

(3)

The short circuit test is a momentary open-loop test.

(4)

The EMI rejection ratio is defined as EMIRR = 20log (VRF_PEAK/ΔVOS).

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LPV521

SNOSB14E – AUGUST 2009 – REVISED JULY 2024

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