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S32K311NHT0MPAST bảng dữ liệu(PDF) 21 Page - NXP Semiconductors

tên linh kiện S32K311NHT0MPAST
Giải thích chi tiết về linh kiện  Supports S32K344, S32K324, S32K314, S32K312, S32K311, S32K310, S32K341, S32K342, S32K322, S32K328, S32K338, S32K348, S32K358 and S32K388. Data is preliminary for S32K389
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Table 2. Absolute maximum ratings (continued)
Symbol
Description
Min
Typ
Max
Unit
Condition
Spec
Number
V11
High-current core
logic supply input 2
-0.3
—
1.26
V
For S32K388 and
S32K389
—
V11
Core logic
voltage supply
(1.1 V), internally
regulated 2
-0.3
—
1.26
V
For all S32K3xx
variants except
S32K388 and S32K389
—
VREFH
ADC high reference
voltage 1,2
-0.3
—
6.0
V
—
—
VREFL
ADC low reference
voltage 2
-0.3
—
0.3
V
—
—
VGPIO_trans
Transient
overshoot voltage
allowed on I/
O pin 1,2,4
-
—
6.0
V
—
—
I_INJPAD_DC_
ABS
Continuous DC
input current
(positive/negative)
that can be injected
into an I/O pin 5
-3
—
3
mA
—
—
I_INJSUM_DC_
ABS
Sum of absolute
value of injected
currents on all the
I/O pins (continuous
DC limit) 5,6
—
—
30
mA
—
—
TSTG
Storage ambient
temperature 7
-55
—
150
°C
—
—
1. 6.0 V maximum for 10 hours over lifetime; 7.0 V maximum for 60 seconds over lifetime.
2. All voltages are referred to VSS unless otherwise specified.
3. Voltage at VDD_DCDC cannot be higher than VDD_HV_A.
4. When a low impedance voltage source, without current limitation, is connected to one or more I/O pins, the VGPIO_trans
absolute max rating must be honored. During current injection, the voltage at the I/O pin or pins could go beyond this limit if
(and ONLY IF) the injected current is being limited (I_INJPAD_DC_ABS is respected).
5. When the input pad voltage levels are close to VDD_HV_A (respectively to VDD_HV_B) or VSS, plus /minus the forward
voltage of ESD diodes, practically, no current is being injected. When these limits are exceeded, the maximum input
current spec must be met. See S32K3 Hardware Design Guidelines for more details and recommendations for protecting
the devices against injection current.
6. If a positive injection current is present in one or more I/O pins when the device is in Low Speed RUN or STANDBY mode,
the voltage in the respective I/O power domain (VDD_HV_A or VDD_HV_B) would increase and may cause damage to the
MCU. It is recommended to add external circuitry (which are explained in the S32K3XX Hardware Design Guidelines) to
protect the MCU against injection current.
7. TSTG specifies the storage temperature range. It is not the operating temperature range. Please refer to the Thermal
operating characteristics table.
NXP Semiconductors
General
S32K3xx Data Sheet, Rev. 10, 07/2024
Data Sheet: Technical Data
Preliminary Information for S32K389
21 / 152



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