EMBA2N10AS datasheet(3/6 Pages) EXCELLIANCE

tên linh kiện	EMBA2N10AS

Giải thích chi tiết về linh kiện	N-Channel Logic Level Enhancement Mode Field Effect Transistor

PDF	6 Pages

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nhà sản xuất	EXCELLIANCE [Excelliance MOS Corp.]

Trang chủ	http://www.excelliancemos.com/

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2019/10/2

p.3

EMBA2N10AS

V - Drain-Source Voltage( V )

5.0V

VGS = 10V

7.0V

4.5V

On-Region Characteristics

On-Resistance Variation with Drain Current and Gate Voltage

5.0 V

1.6

0.8

1.2

1.0

1.4

2.2

1.8

2.0

2.4

7.0 V

10 V

I - Drain Current( A )

VGS = 4.5 V

On-Resistance Variation with Temperature

T - Junction Temperature (°C)

0.4

-50

0.7

1.0

-25

I = 8A

= 10V

1.3

1.6

1.9

125

100

150

On-Resistance Variation with Gate-Source Voltage

TA = 125°C

V - Gate-Source Voltage( V )

0.03

0.06

0.12

0.09

TA = 25°C

0.24

0.18

0.15

0.21

0.27

ID = 5 A

T = -55°C

V - Gate-Source Voltage( V )

V = 10V

25°C

125°C

Transfer Characteristics

Body Diode Forward Voltage Variation with

Source Current and Temperature

25°C

T = 125°C

V - Body Diode Forward Voltage( V )

0.001

0.01

0.1

0.4

0.2

0.6

V = 0V

100

1.0

0.8

1.2

-55°C

1.4

TYPICAL CHARACTERISTICS

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