2019/10/2

p.2

EMBA2N10AS

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP

MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

100

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

1.0

1.8

3.0

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 80V, VGS = 0V

1

A

VDS = 70V, VGS = 0V, TJ = 125 °C

25

On-State Drain Current1

ID(ON)

VDS = 10V, VGS = 10V

17

A

Drain-Source On-State Resistance1

RDS(ON)

VGS = 10V, ID = 8A

80

100

mΩ

VGS = 4.5V, ID = 5A

105

150

Forward Transconductance1

gfs

VDS = 5V, ID = 8A

8

S

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = 25V, f = 1MHz

213.8

pF

Output Capacitance

Coss

71.5

Reverse Transfer Capacitance

Crss

11.7

Gate Resistance

Rg

VGS = 15mV, VDS = 0V, f = 1MHz

1.0

Ω

Total Gate Charge1,2

Qg

VDS = 80V, VGS = 10V,

ID = 8A

6.4

nC

Gate-Source Charge1,2

Qgs

0.6

Gate-Drain Charge1,2

Qgd

2.4

Turn-On Delay Time1,2

td(on)

Vdd=50V, ID=14A, Rg=6.8 ohm,

Vgs=10V

4.6

nS

Rise Time1,2

tr

4.3

Turn-Off Delay Time1,2

td(off)

12.9

Fall Time1,2

tf

1.7

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current

IS

17

A

Pulsed Current3

ISM

68

Forward Voltage1

VSD

IF = 1A, VGS = 0V

1.3

V

Reverse Recovery Time

trr

IF=14A, di/dt=100 A/uS

50.5

nS

Reverse Recovery Charge

Qrr

35.7

nC

1Pulse test : Pulse Width  300 sec, Duty Cycle  2％.

2Independent of operating temperature.

3Pulse width limited by maximum junction temperature.

EMC will review datasheet by quarter, and update new version.