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XPSM82816PVCAR bảng dữ liệu(PDF) 7 Page - Texas Instruments

tên linh kiện XPSM82816PVCAR
Giải thích chi tiết về linh kiện  TPSM8281x 2.7V to 6V Input 4A / 6A Step-Down Power Module with Integrated Inductor, Frequency Synchronization in MicroSIP™ and MagPack™ Package
PDF  38 Pages
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6.4 Thermal Information
THERMAL METRIC(1)
TPSM8281x
UNIT
SIE (14 PINS)
VCA (13 PINS)
JEDEC 51-5
EVM
JEDEC 51-7
EVM
RθJA
Junction-to-ambient thermal resistance
45.3
32.2
72.1
26.6
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
29
n/a (2)
37.2
n/a (2)
°C/W
RθJB
Junction-to-board thermal resistance
27.4
n/a (2)
21.2
n/a (2)
°C/W
ΨJT
Junction-to-top characterization parameter
5.7
7.2
(-0.4)(3)
(-1.9)(3)
°C/W
ΨJB
Junction-to-board characterization parameter
16.2
12.7
20.8
10.1
°C/W
(1)
For more information about thermal metrics, see the Semiconductor and IC Package Thermal Metrics application note.
(2)
Not applicable to an EVM.
(3)
The junction temperature is lower than the inductor temperature leading to a temperature increase towards the top of the package
6.5 Electrical Characteristics
Over operating junction remperature range (TJ = –40°C to +125°C) and VIN = 2.7 V to 6 V. Typical values at VIN = 5 V and TJ
= 25°C. (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY
IQ
Quiescent current
EN = High, no load, device not switching,
MODE/SYNC = GND, VOUT = 0.6 V
18
36
μA
ISD
Shutdown current
EN = GND
0.15
90
μA
VUVLO
Undervoltage lockout threshold
VIN rising
2.45
2.6
2.7
V
VIN falling
2.1
2.5
2.6
V
TJSD
Thermal shutdown threshold
TJ rising
180
°C
Thermal shutdown hysteresis
TJ falling
15
°C
CONTROL and INTERFACE
VIH,EN
Input threshold voltage
EN rising
1.05
1.1
1.15
V
VIL,EN
Input threshold voltage
EN falling
0.96
1.0
1.05
V
IIH,EN
Input leakage current into EN
EN = VIN or GND
125
nA
VIH
Input-threshold voltage at MODE/SYNC
1.1
V
VIL
Input-threshold voltage at MODE/SYNC
0.3
V
IIH
Input leakage current into MODE/SYNC
250
nA
fSW
PWM switching frequency range
MODE/SYNC = high
1.8
2.25
4
MHz
fSW
PWM switching frequency
COMP/FSET = GND or VIN
2.08
2.25
2.4
MHz
fSW
PWM switching frequency tolerance
using a resistor from COMP/FSET to
GND
–12%
12%
fSYNC
Frequency range on MODE/SYNC pin for
synchronization
1.8
4
MHz
tSync_lock Time to lock to external frequency
50
µs
Duty cycle of synchronization signal at
MODE/SYNC
20%
80%
tDelay
Enable delay time
Time from EN high to device starts
switching; VIN applied already
135
270
520
µs
tRamp
Output voltage ramp time, SS/TR pin
open
IOUT = 0 mA, time from device starts
switching to power good; device not in
current limit
90
150
220
µs
ISS/TR
SS/TR source current
8
10
12
µA
RDIS,SS/T
R
Internal discharge resistance on SS/TR
EN = low
0.7
1.1
1.5
kΩ
Tracking gain
VFB / VSS/TR
1
www.ti.com
TPSM82816
SLUSEY7A – DECEMBER 2022 – REVISED JUNE 2024
Copyright © 2024 Texas Instruments Incorporated
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Product Folder Links: TPSM82816



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