Specifications T

J = 25ºC, unless otherwise noted

Parameter

Symbol

Test Conditions

Value

Unit

Min.

Typ.

Max.

Static

Drain-Source Breakdown Voltage

V

(BR)DSS

V

GS = 0V, ID = 250µA

600

--

--

V

Zero Gate Voltage Drain Current

I

DSS

V

DS = 600V, VGS = 0V, TJ = 25º

C

--

--

1

μA

Gate-Source Leakage

I

GSS

V

GS = ±30V

--

--

±100

nA

Gate-Source Threshold Voltage

V

GS(th)

V

DS = VGS, ID = 250µA

3.0

--

4.0

V

Drain-Source On-Resistance (Note3)

R

DS(on)

V

GS = 10V, ID = 1.5A

--

2.4

2.8

Ω

Dynamic

Input Capacitance

C

iss

V

GS = 0V,

V

DS = 25V,

f = 1.0MHz

--

462

--

pF

Output Capacitance

C

oss

--

54.2

--

Reverse Transfer Capacitance

C

rss

--

8.8

--

Total Gate Charge

Q

g

V

DD = 480V, ID = 3.0A,

V

GS = 10V

--

13.5

--

nC

Gate-Source Charge

Q

gs

--

2

--

Gate-Drain Charge

Q

gd

--

6

--

Turn-on Delay Time

t

d(on)

V

DD = 300V, ID = 3.0A,

R

G = 25 Ω

--

10

--

ns

Turn-on Rise Time

t

r

--

25

--

Turn-off Delay Time

t

d(off)

--

40

--

Turn-off Fall Time

t

f

--

52

--

Drain-Source Body Diode Characteristics

Continuous Body Diode Current

I

S

T

C = 25 º

C

--

--

3

A

Pulsed Diode Forward Current

I

SM

--

--

12

Body Diode Voltage

V

SD

T

J = 25º

C, I

SD = 3.0A, VGS = 0V

--

--

1.4

V

Reverse Recovery Time

t

rr

V

GS = 0V,IS = 3.0A,

di

F/dt =100A /μs

--

220

--

ns

Reverse Recovery Charge

Q

rr

--

3

--

μC

Notes

1.

Repetitive Rating: Pulse width limited by maximum junction temperature

2.

I

AS = 3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC

3.

Pulse Test: Pulse width

≤ 300μs, Duty Cycle ≤ 1%

4N60F/P/Y/D

600V N-Channel Enhancement Mode MOSFET

Rev:2023A2

2