PRF957 datasheet(4/16 Pages) PHILIPS

4 / 16 page

1999 Jul 23

Philips Semiconductors

Product speciﬁcation

UHF wideband transistor

PRF957

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Note

1. GUM is the maximum unilateral power gain, assuming s12 is zero.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

DC characteristics

V(BR)CBO

collector-base breakdown voltage

IC = 100 µA; IE =0

−−

V(BR)CEO

collector-emitter breakdown

voltage

IC = 100 µA; IB =0

−−

V(BR)EBO

emitter-base breakdown voltage

IE =10 µA; IC = 0

1.5

−−

ICBO

collector-base leakage current

VCB = 10 V; IE =0

−−

100

IEBO

emitter-base leakage current

VEB =1V; IC =0

−−

100

hFE

DC current gain

IC = 5 mA; VCE = 6 V

100

200

IC = 15 mA; VCE =6V

−

100

−

AC characteristics

Cre

feedback capacitance

IC = 0; VCB = 6 V; f = 1 MHz

−

0.4

−

transition frequency

IC = 30 mA; VCE =6V; fm = 1 GHz

−

8.5

−

GHz

21|

insertion gain

IC = 30 mA; VCE =6V; f=1GHz

−

GUM

maximum unilateral power gain;

note 1

IC = 30 mA; VCE =6V;

Tamb =25 °C; f = 1 GHz

−

IC = 30 mA; VCE =6V;

Tamb =25 °C; f = 2 GHz

−

9.2

−

noise ﬁgure

S = Γopt; IC = 5 mA; VCE =6V;

f = 1 GHz

−

1.3

−

S = Γopt; IC = 5 mA; VCE =6V;

f = 2 GHz

−

1.8

−

–

() 1s

–

()

-------------------------------------------------------- dB

log

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