PRF957 datasheet(2/16 Pages) PHILIPS

2 / 16 page

1999 Jul 23

Philips Semiconductors

Product speciﬁcation

UHF wideband transistor

PRF957

FEATURES

• Small size

• Low noise

• Low distortion

• High gain

• Gold metallization ensures excellent reliability.

APPLICATIONS

• Communication and instrumentation systems.

DESCRIPTION

Silicon NPN transistor in a surface mount 3-pin SOT323

package. The transistor is primarily intended for wideband

applications in the GHz-range in the RF front end of analog

and digital cellular telephones, cordless phones, radar

detectors, pagers and satellite TV-tuners.

PINNING

DESCRIPTION

base

emitter

collector

Fig.1 Simplified outline (SOT323) and symbol.

Marking code: W2.

handbook, halfpage

MAM062

Top view

QUICK REFERENCE DATA

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Cre

feedback capacitance

IC = 0; VCB =6V; f=1MHz

−

0.4

−

transition frequency

IC = 30 mA; VCE =6V; fm = 1 GHz

−

8.5

−

GHz

GUM

maximum unilateral power gain

IC = 30 mA; VCE =6V;

Tamb =25 °C; f = 1 GHz

−

noise ﬁgure

S = Γopt; IC = 5 mA; VCE =6V;

f = 1 GHz

−

1.3

−

Ptot

total power dissipation

Ts =60 °C; note 1

−−

270

Rth j-s

thermal resistance from junction

to soldering point

Ptot = 270 mW

−−

425

K/W

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