1997 Feb 18

2

Philips Semiconductors

Product specification

Microwave power transistor

PLB16004U

FEATURES

• Diffused emitter ballasting resistors

improve excellent current sharing

and withstanding a high VSWR

• Interdigitated common-base

structure provides high emitter

efficiency

• Gold metallization with barrier

realizes very stable characteristics

and excellent lifetime

• Multicell geometry gives good

balance of dissipated power and

low thermal resistance

• Internal input and output

prematching networks allow an

easier design of circuits.

APPLICATIONS

Intended for use in common-base

class C power amplifiers at 1.6 GHz.

DESCRIPTION

NPN silicon planar epitaxial

microwave power transistor in a

SOT437A glued cap metal ceramic

flange package, with base connected

to flange.

QUICK REFERENCE DATA

narrowband amplifier.

MODE OF

OPERATION

f

(GHz)

(V)

(W)

(dB)

(%)

(

Ω)

Class C (CW)

1.6

28

>4.5

>8.5

>40

see Figs 5

and 6

PINNING - SOT437A

PIN

DESCRIPTION

1

collector

2

emitter

3

base connected to flange

Fig.1 Simplified outline and symbol.

handbook, 4 columns

1

2

3

Top view

e

c

b

MAM112

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.