PHT6N03LT datasheet(1/6 Pages) PHILIPS

tên linh kiện	PHT6N03LT

Giải thích chi tiết về linh kiện	TrenchMOS transistor Logic level FET

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Philips Semiconductors

Product specification

TrenchMOS

™ transistor

PHT6N03LT

Logic level FET

FEATURES

SYMBOL

QUICK REFERENCE DATA

• ’Trench’ technology

V

DSS = 30 V

• Very low on-state resistance

• Fast switching

I

D = 5.9 A

• Stable off-state characteristics

• High thermal cycling performance

R

DS(ON) ≤ 30 mΩ (VGS = 5 V)

• Surface mounting package

R

DS(ON) ≤ 28 mΩ (VGS = 10 V)

GENERAL DESCRIPTION

PINNING

SOT223

N-channel

enhancement

mode

DESCRIPTION

logic

level

field-effect

power

transistor

using

’trench’

1

gate

technology. The device has very

low

on-state

resistance.

It

is

2

drain

intended for use in dc to dc

converters and general purpose

3

source

switching applications.

tab

drain

The PHT6N03LT is supplied in the

SOT223

surface

mounting

package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

DSS

Drain-source voltage

T

j = 25 ˚C to 150˚C

-

30

V

DGR

Drain-gate voltage

T

j = 25 ˚C to 150˚C; RGS = 20 kΩ

-30

V

GS

Gate-source voltage

-

± 13

V

I

D

Continuous drain current

T

amb =

25 ˚C; V

GS = 10 V

-

5.9

A

T

amb = 100 ˚C; VGS = 10 V

-

4.1

A

I

DM

Pulsed drain current

-

23.6

A

P

D

Total power dissipation

T

amb = 25 ˚C

-

1.8

W

T

j, Tstg

Operating junction and

- 55

150

˚C

storage temperature

ESD LIMITING VALUE

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

C

Electrostatic discharge

Human body model (100 pF, 1.5 k

Ω)-

2

kV

capacitor voltage, all pins

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

R

th j-sp

Thermal resistance junction

mounted on any pcb

-

15

K/W

to solder point

R

th j-a

Thermal resistance junction

mounted on test pcb of fig:17

-

70

-

K/W

to ambient

d

g

s

4

1

23

January 1998

1

Rev 1.300

Số phần tương tự - PHT6N03LT

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
NXP Semiconductors	PHT6N03T	70Kb / 10P	TrenchMOS transistor Standard level FET November 1997 Rev 1.200

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