NXP Semiconductors

MPX5010-MPXV5010-MPVZ5010

Integrated silicon pressure sensor on-chip signal conditioned, temperature compensated and

calibrated

[6]

Response Time is defined as the time for the incremental change in the output to go from 10% to 90% of its final value when subjected to a specified step

change in pressure.

[7]

Warm-up Time is defined as the time required for the product to meet the specified output voltage after the Pressure has been stabilized.

[8]

Offset Stability is the product's output deviation when subjected to 1000 hours of Pulsed Pressure, Temperature Cycling with Bias Test.

9 On-chip temperature compensation and calibration

The performance over temperature is achieved by integrating the shear-stress strain gauge, temperature

compensation, calibration and signal conditioning circuitry onto a single monolithic chip.

Figure 10 illustrates the differential or gauge configuration in the basic chip carrier (Case 482). A fluorosilicone

gel isolates the die surface and wire bonds from the environment, while allowing the pressure signal to be

transmitted to the sensor diaphragm.

The MPxx5010G series pressure sensor operating characteristics, and internal reliability and qualification tests

are based on use of dry air as the pressure media. Media, other than dry air, may have adverse effects on

sensor performance and long-term reliability. Contact the factory for information regarding media compatibility in

your application.

Figure 11 shows the recommended decoupling circuit for interfacing the integrated sensor to the A/D input of a

microprocessor or microcontroller. Proper decoupling of the power supply is recommended.

Figure 12 shows the sensor output signal relative to pressure input. Typical, minimum, and maximum output

curves are shown for operation over a temperature range of 0° to 85°C using the decoupling circuit shown in

Figure 11. The output will saturate outside of the specified pressure range.

aaa-054999

Fluoro silicone

gel die coat

Stainless

steel cap

Thermoplastic

case

Die bond

Differential sensing element

Wire bond

Lead frame

P2

P1

Die

Figure 10. Cross-sectional diagram SOP (not to scale)

 

aaa-040608

IPS

1.0 µF

0.01 µF

470 pF

GND

OUTPUT

+5 V

Vout

VS

Figure 11. Recommended power supply decoupling and output filtering

Note: For additional output filtering, please refer to Application Note AN1646.

 

MPX5010

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© 2024 NXP B.V. All rights reserved.

Product data sheet

Rev. 14 — 17 May 2024

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