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DESCRIPTION (CONTINUED)

ABSOLUTE MAXIMUM RATINGS

RECOMMENDED OPERATING CONDITIONS

ELECTROSTATIC DISCHARGE (ESD) PROTECTION

TPS40077

SLUS714 – JANUARY 2007

The TPS40077 drives external N-channel MOSFETs using second-generation, predictive-gate drive to minimize

conduction in the body diode of the low-side FET and maximize efficiency. Pre-biased outputs are supported by

not allowing the low-side FET to turn on until the voltage commanded by the closed-loop soft start is greater

than the pre-bias voltage. Voltage feed-forward provides good response to input transients and provides a

constant PWM gain over a wide input-voltage operating range to ease compensation requirements.

Programmable short-circuit protection provides fault-current limiting and hiccup recovery to minimize power

dissipation with a shorted output. The 16-pin PowerPAD package gives good thermal performance and a

compact footprint.

ORDERING INFORMATION

PACKAGE

ORDERABLE PART NUMBER

Plastic HTSSOP (PWP)

Tube

TPS40077PWP

Plastic HTSSOP (PWP)

Tape and reel

TPS40077PWPR

TPS40077

UNIT

VDD, ILIM

30

COMP, FB, KFF, PGD, LVBP

–0.3 to 6

Input voltage range

V

SW

–0.3 to 40

SW, transient < 50 ns

–2.5

COMP, KFF, RT, SS

–0.3 to 6

VBOOST

50

Output voltage range

V

DBP

10.5

LVBP

6

Output current source

LDRV, HDRV

1.5

LDRV, HDRV

2

A

Output current sink

KFF

10

RT

1

Output current

mA

LVBP

1.5

Operating junction temperature range

–40 to 125

Storage temperature

–55 to 150

°C

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds

260

(1)

Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating

conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

MIN

NOM

MAX

UNIT

Input voltage

4.5

28

V

Operating free-air temperature

–40

85

°C

UNIT

Human body model (HBM)

2000

V

Charged device model (CDM)

1500

V

2

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