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M41000002M bảng dữ liệu(PDF) 59 Page - Advanced Micro Devices

tên linh kiện M41000002M
Giải thích chi tiết về linh kiện  32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
PDF  66 Pages
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nhà sản xuất  AMD [Advanced Micro Devices]
Trang chủ  http://www.amd.com
Logo AMD - Advanced Micro Devices

M41000002M bảng dữ liệu(HTML) 59 Page - Advanced Micro Devices

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58
Am41DL32x8G
September 5, 2002
PR ELI M I NARY
AC CHARACTERISTICS
SRAM Write Cycle
Notes:
1. WE# controlled, if CIOs is low, ignore UB#s and LB#s timing.
2. t
CW is measured from CE1#s going low to the end of write.
3. t
WR is measured from the end of write to the address change. tWR applied in case a write ends as CE1#s or WE# going high.
4. t
AS is measured from the address valid to the beginning of write.
5. A write occurs during the overlap (t
WP) of low CE#1 and low WE#. A write begins when CE1#s goes low and WE# goes low when
asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A
write ends at the earliest transition when CE1#s goes high and WE# goes high. The t
WP is measured from the beginning of write
to the end of write.
Figure 30.
SRAM Write Cycle—WE# Control
Parameter
Symbol
Description
Speed Options
Unit
70
85
tWC
Write Cycle Time
Min
70
85
ns
t
Cw
Chip Enable to End of Write
Min
60
70
ns
tAS
Address Setup Time
Min
0
ns
t
AW
Address Valid to End of Write
Min
60
70
ns
tBW
UB#s, LB#s to End of Write
Min
60
70
ns
t
WP
Write Pulse Time
Min
50
60
ns
tWR
Write Recovery Time
Min
0
ns
t
WHZ
Write to Output High-Z
Min
0
0
ns
Max
20
25
t
DW
Data to Write Time Overlap
Min
30
35
ns
tDH
Data Hold from Write Time
Min
0
ns
t
OW
End Write to Output Low-Z
min
5
ns
Address
CE1#s
Data Undefined
WE#
Data In
Data Out
tWC
tCW
(See Note 1)
tAW
High-Z
High-Z
Data Valid
CE2s
tCW
(See Note 1)
tWP
(See Note 4)
tAS
(See Note 3)
tWR
tDW
tDH
tOW
tWHZ



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