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SY89823LHC bảng dữ liệu(PDF) 3 Page - Micrel Semiconductor

tên linh kiện SY89823LHC
Giải thích chi tiết về linh kiện  3.3V, 500MHz 1:22 DIFFERENTIAL HSTL (1.5V) FANOUT BUFFER/TRANSLATOR
PDF  8 Pages
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nhà sản xuất  MICREL [Micrel Semiconductor]
Trang chủ  http://www.micrel.com
Logo MICREL - Micrel Semiconductor

SY89823LHC bảng dữ liệu(HTML) 3 Page - Micrel Semiconductor

  SY89823LHC Datasheet HTML 1Page - Micrel Semiconductor SY89823LHC Datasheet HTML 2Page - Micrel Semiconductor SY89823LHC Datasheet HTML 3Page - Micrel Semiconductor SY89823LHC Datasheet HTML 4Page - Micrel Semiconductor SY89823LHC Datasheet HTML 5Page - Micrel Semiconductor SY89823LHC Datasheet HTML 6Page - Micrel Semiconductor SY89823LHC Datasheet HTML 7Page - Micrel Semiconductor SY89823LHC Datasheet HTML 8Page - Micrel Semiconductor  
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Precision Edge®
SY89823L
Micrel, Inc.
M9999-011907
hbwhelp@micrel.com or (408) 955-1690
DC ELECTRICAL CHARACTERISTICS(4)
Absolute Maximum Ratings(1)
Supply Voltage (V
IN) ..................................... –0.5V to VCCI
VCC Pin Potential to Ground Pin
V
CCI, VCCO ........................................................... –0.5V to +4.0V
DC Output Current, Output HIGH (I
OUT) .................. –50mA
Lead Temperature (soldering, 20 sec.) ..................... 260
°C
Storage Temperature (T
S) ....................... –65°C to +150°C
Operating Ratings(2)
Supply Voltage
V
CCI .................................................................. +3.15V to +3.45V
V
CCO ..................................................................... +1.6V to +2.0V
Ambient Temperature (T
A) ......................... –40°C to +85°C
Package Thermal Resistance(3)
EPAD-TQFP
(θ
JA) with Die attach soldered to GND
Still-Air ............................................................. 23
°C/W
200lfpm ............................................................ 18
°C/W
500lfpm ............................................................ 15
°C/W
with Die attach NOT soldered to GND
Still-Air ............................................................. 44
°C/W
200lfpm ............................................................ 36
°C/W
500lfpm ............................................................ 30
°C/W
EPAD-TQFP
(θ
JC) .............................................. 4.3°C/W
Power Supply T
A = –40°C to +85°C, unless otherwise stated.
Symbol
Parameter
Condition
Min
Typ
Max
Units
V
CCI
V
CC Core
3.15
3.3
3.45
V
V
CCO
V
CC Output
1.6
1.8
2.0
V
I
CCI
I
CC Core
Max V
CC, no load
—
115
170
mA
HSTL V
CCI = 3.3V ± 5%; VCCO = 1.8V ± 10%; RL = 50Ω to GND; TA = –40°C to +85°C, unless otherwise stated.
Symbol
Parameter
Condition
Min
Typ
Max
Units
V
OH
Output HIGH Voltage
1.0
—
1.2
V
V
OL
Output LOW Voltage
0.2
—
0.4
V
V
IH
Input HIGH Voltage
V
X +0.1
—
1.6
V
V
IL
Input LOW Voltage
–0.3
—
V
X –0.1
V
V
X
Input Crossover Voltage
0.68
—
0.9
V
I
IH
Input HIGH Current
+20
—–350
µA
I
IL
Input LOW Current
——
–500
µA
LVPECL V
CCI = 3.3V ± 5%; VCCO = 1.8V ± 10%; TA = –40°C to +85°C, unless otherwise stated.
Symbol
Parameter
Condition
Min
Max
Units
V
IH
Input HIGH Voltage
V
CCI – 1.165 VCCI – 0.880
V
V
IL
Input LOW Voltage
V
CCI – 1.810 VCCI – 1.475
V
I
IH
Input HIGH Current
—
+150
µA
I
IL
Input LOW Current
0.5
—
µA
Notes:
1. Permanent device damage may occur if the ratings in the “Absolute Maximum Ratings” section are exceeded. This is a stress rating only and
functional operation is not implied at conditions other than those detailed in the operational sections of this data sheet. Exposure to absolute
maximum ratings conditions for extended periods may affect device reliability.
2. The data sheet limits are not guaranteed if the device is operated beyond the operating ratings.
3. Valid for 4-layer board.
4. The circuit is designed to meet the DC specifications shown in the above table after thermal equilibrium has been established.



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