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6/19

Rev.0.0

Dual-ChannelIsolatedGateDriver

BTD21520x

7.SpecificationParameters

7.1AbsoluteMaximumRatings

SYMBOL

PARAMETER

MIN

MAX

UNIT

VCC Input bias pin supply voltage (pin 3/pin 8)

GND-0.3

GND+20

V

VDDx Driver bias supply (to VEEx)

VEEx-0.3

VEEx+35

VO Output signal voltage

VEEx-0.3

VDDx+0.3

VIN Input signal voltage (INx, PWM, DIS, DT to GND)

GND-0.3

VCC+0.3

- Channel to channel voltage

-

1850

TJ Operating Junction Temperature

-40

150

°C

TS Storage Temperature

-65

150

TL Soldering Temperature (10s)

-

300

ESD Human-body model (HBM)

±4000

V

Charge-device model (CDM)

±1500

- Input signal voltage(IN1,IN2 Transient for 50ns)

-5

VCC+0.3

Note: The above are stress levels only.Devices are not recommended to operate under these or any other conditions beyond these

values.Prolonged operation under the absolute maximum rating may affect the reliability of the device, and in severe cases it may

cause permanent damage to the devices.

7.2ThermalResistanceInformation

SYMBOL

DESCRIPTION

SOW-14

UNIT

RθJA Junction-to-ambient thermal resistance

67.3

℃/W

RθJC(top) Junction-to-case (top) thermal resistance

34.4

RθJB Junction-to-board thermal resistance

32.1

ψJT Junction-to-top characterization parameter

18.0

ψJB Junction-to-board characterization parameter

31.6

7.3DissipatedPower

SYMBOL

PARAMETER

TESTCONDITIONS

RATING

UNIT

PD Power dissipation by BTD21520x

VCC=18V, VDD1/2=12V, IN1/2=3.3V, 3MHz,

50% duty cycle square wave, 1nF load

1.05

W

PDI Power dissipation by transmitter side of BTD21520x

0.05

PD1, PD2 Power dissipation by each driver side of BTD21520x

0.5

7.4RecommendedOperationConditions

SYMBOL

PARAMETER

MIN

MAX

UNIT

VCC Input supply voltage

3

18

V

VDDx Driver output bias supply

BTD21520xAx

6.5

25

BTD21520xBx

9.2

25

VIN Input Voltage Range IN1, IN2, PWM

0

VCC

V

TA Operating ambient temperature

-40

125

℃