PMR400UN

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© NXP B.V. 2012. All rights reserved.

Product data sheet

Rev. 2 — 2 February 2012

7 of 13

NXP Semiconductors

PMR400UN

N-channel TrenchMOS ultra low level FET

ID = 0.25 mA; VDS = VGS

Fig 9.

Gate-source threshold voltage as a function of

junction temperature

Fig 10. Sub-threshold drain current as a function of

gate-source voltage

Fig 11. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

Fig 12. Source current as a function of source-drain

voltage; typical values

Tj (°C)

−60

180

120

060

03aj65

0.6

0.3

0.9

1.2

VGS(th)

(V)

0

max

min

typ

03am43

VGS (V)

0

1.2

0.8

0.4

10−4

10−5

10−3

ID

(A)

10−6

min

typ

max

03an98

1

10

10

2

10

-1

1

10

10

2

VDS (V)

C

(pF)

Ciss

Coss

Crss

VSD (V)

01

0.8

0.4

0.6

0.2

03an97

0.4

0.6

0.2

0.8

1

IS

(A)

0

150

°C

Tj = 25 °C

VGS = 0 V