MRF21030LR3 MRF21030LSR3

1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for PCN and PCS base station applications with frequencies from

2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

applications. To be used in Class AB for PCN - PCS/cellular radio and WLL

applications.

• Wideband CDMA Performance: -45 dB ACPR @ 4.096 MHz, 28 Volts

Output Power — 3.5 Watts

Power Gain — 14 dB

Efficiency — 15%

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2110 MHz, 30 Watts CW

Output Power

Features

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Low Gold Plating Thickness on Leads, 40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

-0.5, +65

Vdc

Gate-Source Voltage

-0.5, +15

Vdc

Derate above 25°C

83.3

0.48

W

W/°C

Storage Temperature Range

- 65 to +150

°C

Case Operating Temperature

150

°C

Operating Junction Temperature

200

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

2.1

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

2 (Minimum)

Machine Model

M3 (Minimum)

Document Number: MRF21030

Rev. 12, 5/2006

Freescale Semiconductor

Technical Data

MRF21030LR3

MRF21030LSR3

2200 MHz, 30 W, 28 V

LATERAL N-CHANNEL

RF POWER MOSFETs

CASE 465E-04, STYLE 1

NI-400

MRF21030LR3

CASE 465F-04, STYLE 1

NI-400S

MRF21030LSR3

© Freescale Semiconductor, Inc., 2006. All rights reserved.