Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUJ100AT

GENERAL DESCRIPTION

High-voltage, high-speed planar-passivated npn power switching transistor in the SOT223 envelope intended for

use in compact fluorescent lamps, low power electronic lighting ballasts and similar high frequency converters and

inverters.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

-

700

V

V

CBO

Collector-Base voltage (open emitter)

-

700

V

V

CEO

Collector-emitter voltage (open base)

-

400

V

I

C

Collector current (DC)

-

1.0

A

I

CM

Collector current peak value

-

2.0

A

P

tot

Total power dissipation

T

-

6

W

V

CEsat

Collector-emitter saturation voltage

I

0.23

1.0

V

h

FE

I

14

20

t

fi

Fall time (Inductive)

I

50

70

ns

PINNING - SOT223

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

base

2

collector

3

emitter

4

collector (tab)

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

CESM

Collector to emitter voltage

V

-

700

V

V

CEO

Collector to emitter voltage (open base)

-

400

V

V

CBO

Collector to base voltage (open emitter)

-

700

V

I

C

Collector current (DC)

-

1.0

A

I

CM

Collector current peak value

-

2.0

A

I

B

Base current (DC)

-

0.5

A

I

BM

Base current peak value

-

1.0

A

P

tot

Total power dissipation

T

-

6

W

T

stg

Storage temperature

-65

150

˚C

T

j

Junction temperature

-

150

˚C

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R

th j-sp

Junction to solder point

-

20

K/W

R

th j-a

Junction to ambient

pcb mounted pad areas as in Fig.

23)

pcb mounted, minimum footprint

70

-

K/W

Mounted on 50x34x2mm

aluminium PCB

30

-

K/W

4

1

23

b

c

e

September 1999

1

Rev 1.000