BUJ100AT datasheet(4/9 Pages) PHILIPS

tên linh kiện	BUJ100AT

Giải thích chi tiết về linh kiện	Silicon Diffused Power Transistor

PDF	9 Pages

Scroll/Zoom	100%

nhà sản xuất	PHILIPS [NXP Semiconductors]

Trang chủ	http://www.nxp.com

Logo

4 / 9 page

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUJ100AT

Fig.7. Collector-Emitter saturation voltage.

Fig.8. Base-Emitter saturation voltage.

Solid Lines = typ values, I

C/IB = 3

Solid Lines = typ values, I

C/IB = 3

INDUCTIVE SWITCHING

Fig.9. Test circuit inductive load.

Fig.10. Switching times waveforms with inductive load.

CC = 300 V; -VBE = 5 V, LC = 200 µH; LB = 1 µH

Fig.11. Inductive switching.

Fig.12. Inductive switching.

tfi = f(h

FE)

tfi = f(I

0.01

0.1

0.5

1.5

IC, COLLECTOR CURRENT/A

VCEsat VOLTAGE/V

IC/IB = 3

25 C

-40 C

125 C

0.01

0.1

0.5

0.6

0.7

0.8

0.9

1.1

1.2

1.3

1.4

1.5

IC, COLLECTOR CURRENT/A

VBEsat VOLTAGE/V

IC/IB = 3

25 C

125 C

-40 C

IBon

-VBB

T.U.T.

VCC

ICon

IBon

-IBoff

toff

10 %

90 %

246

100

125

150

175

200

225

250

275

HFE GAIN (IC/IB)

tfi (ns)

IC = 2A

IC = 1A

IC = 1.5A

0.8

1.2

1.4

1.6

1.8

2.2

100

125

150

175

200

225

250

275

IC COLLECTOR CURRENT /A

tfi (ns)

IC/IB = 10

IC/IB = 5

IC/IB =3

September 1999

Rev 1.000

BUJ100AT bảng dữ liệu(PDF) 4 Page - NXP Semiconductors

BUJ100AT bảng dữ liệu(HTML) 4 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9

bảng dữ liệu tải về

Link URL