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UPD78P324LP bảng dữ liệu(PDF) 21 Page - Renesas Technology Corp

tên linh kiện UPD78P324LP
Giải thích chi tiết về linh kiện  MOS INTEGRATED CIRCUIT
PDF  82 Pages
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nhà sản xuất  RENESAS [Renesas Technology Corp]
Trang chủ  http://www.renesas.com
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UPD78P324LP bảng dữ liệu(HTML) 21 Page - Renesas Technology Corp

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µPD78P324, 78P324(A)
19
3.2
PROCEDURE FOR PROM WRITE
The procedure for writing into the PROM is as follows (see Figure 3-3).
(1) Fix to RESET = H; and AVDD = L. Other unused pins are processed as directed by the PIN CONFIGURATION.
(2) Supply +6.5 V to the VDD pin; and +12.5 V to the VPP pin. Enter the low level into the CE pin.
(3) Enter the initial address into A0-A16.
(4) Enter the Write data into D0-D7.
(5) Enter the 0.1 ms program pulse (active low) into the PGM pin.
(6) Verify mode. Check if the Write data has been written or not.
Enter the active low pulse into the OE pin and read the Write data from D0-D7.
• When written: Move to (8).
• When not able to write: Repeat (4) to (6). If it is not possible to write even when the repetition has been
made ten times, move to (7).
(7) Stop the Write operation as a defective device.
(8) Increment the address.
(9) Repeat (4) to (8) until the final address.
The timing of the above (2) to (7) steps is shown in Figure 3-2.
Figure 3-2. PROM Write/Verify Timing
Hi-Z
Hi-Z
Hi-Z
Program
Program verify
Address input
Data input
Data output
A0-A16
D0-D7
VPP
VDD
CE (input)
PGM (input)
OE (input)
+ 12.5V
VDD
+ 6.5V
VDD



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