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UPD75P0116CU bảng dữ liệu(PDF) 30 Page - Renesas Technology Corp

tên linh kiện UPD75P0116CU
Giải thích chi tiết về linh kiện  MOS INTEGRATED CIRCUIT
PDF  63 Pages
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nhà sản xuất  RENESAS [Renesas Technology Corp]
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µPD75P0116
28
Data Sheet U12603EJ1V1DS
8. ONE-TIME PROM (PROGRAM MEMORY) WRITE AND VERIFY
The program memory in the
µPD75P0116 is a 16384 × 8-bit electronic write-enabled one-time PROM. The pins listed
in the table below are used for this PROM’s write/verify operations. Clock input from the CL1 pins is used instead of
address input as a method for updating addresses.
Pin name
Function
VPP
Pin (usually VDD) where programming voltage is applied during
program memory write/verify
CL1, CL2
Clock input to the CL1 pin for address updating during program
memory write/verify. Leave the CL2 pin open.
MD0/P30-MD3/P33
Operation mode selection pin for program memory write/verify
D0/P40-D3/P43 (lower 4)
8-bit data I/O pin for program memory write/verify
D4/P50-D7/P53 (higher 4)
VDD
Pin where power supply voltage is applied. Power voltage
range for normal operation is 1.8 to 5.5 V. Apply 6.0 V for
program memory write/verify.
Caution
Pins not used for program memory write/verify should be processed as follows.
• All unused pins except XT2 ...... Connect to Vss via a pull-down resistor
• XT2 pin ........................................ Leave open
8.1 Operation Modes for Program Memory Write/Verify
When +6 V is applied to the
µPD75P0116’s VDD pin and +12.5 V is applied to its VPP pin, program write/verify modes
are in effect. Furthermore, the following detailed operation modes can be specified by setting pins MD0 to MD3 as shown
below.
Operation mode specification
Operation mode
VPP
VDD
MD0
MD1
MD2
MD3
+12.5 V
+6 V
H
L
H
L
Zero-clear program memory address
LH
HH
Write mode
LL
HH
Verify mode
H
×
HH
Program inhibit mode
Remark
×: L or H



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