Philips Semiconductors

BST82

N-channel enhancement mode field-effect transistor

Product specification

Rev. 03 — 26 July 2000

8 of 13

9397 750 07223

© Philips Electronics N.V. 2000. All rights reserved.

Tj =25 °C and 150 °C; VGS =0V

Fig 13. Source (diode forward) current as a function of source-drain (diode forward)

voltage; typical values.

03aa67

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

0

0.2

0.4

0.6

0.8

1

1.2

1.4

VSD (V)

IS

(A)

Tj = 25

oC

150oC

VGS = 0 V