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BST82 bảng dữ liệu(PDF) 8 Page - Nexperia B.V. All rights reserved

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Giải thích chi tiết về linh kiện  N-channel enhancement mode field-effect transistor
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Philips Semiconductors
BST82
N-channel enhancement mode field-effect transistor
Product specification
Rev. 03 — 26 July 2000
7 of 13
9397 750 07223
© Philips Electronics N.V. 2000. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =5V
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
Tj =25 °C and 150 °C; VDS > ID × RDSon
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa34
0
0.5
1
1.5
2
2.5
3
-60
-20
20
60
100
140
180
typ
min
V
GS(th)
T
j
(
o
C)
(V)
03aa37
0
0.5
1
1.5
2
2.5
3
typ
min
I
D
V
GS
(V)
10-6
10-5
10-4
10-3
10-2
10-1
(A)
03aa66
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
ID (A)
gfs
(S)
Tj = 25
oC
150oC
VDS > ID X RDSon
03aa68
1
10
102
10-1
110
102
VDS (V)
Ciss, Coss,
Crss (pF)
Ciss
Coss
Crss



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