MRF18030BLSR3 datasheet(2/8 Pages) FREESCALE

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RF Device Data

Freescale Semiconductor

MRF18030BLR3 MRF18030BLSR3

Table 4. Electrical Characteristics (TC = 25°C, 50 ohm system unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

(VGS = 0 Vdc, ID = 20 μAdc)

V(BR)DSS

—

Vdc

Zero Gate Voltage Drain Current

(VDS = 26 Vdc, VGS = 0 Vdc)

IDSS

—

μAdc

Gate-Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS

—

μAdc

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 100 μAdc)

VGS(th)

Vdc

Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 250 mAdc)

VGS(Q)

3.9

4.5

Vdc

Drain-Source On-Voltage

(VGS = 10 Vdc, ID = 1 Adc)

VDS(on)

—

0.29

0.4

Vdc

Forward Transconductance

(VDS = 10 Vdc, ID = 1 Adc)

gfs

—

Dynamic Characteristics

Reverse Transfer Capacitance (1)

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Crss

—

1.3

—

Functional Tests (In Freescale Test Fixture) (2)

Output Power, 1 dB Compression Point

(VDD = 26 Vdc, IDQ = 250 mA, f = 1930 - 1990 MHz)

P1dB

—

Common-Source Amplifier Power Gain @ 30 W

(VDD = 26 Vdc, IDQ = 250 mA, f = 1930 - 1990 MHz)

Gps

—

Drain Efficiency @ 30 W

(VDD = 26 Vdc, IDQ = 250 mA, f = 1930 - 1990 MHz)

46.5

—

Input Return Loss @ 30 W

(VDD = 26 Vdc, IDQ = 250 mA, f = 1930 - 1990 MHz)

IRL

—

-12

-9

1. Part internally matched both on input and output.

2. Device specifications obtained on a Production Test Fixture.

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