MRF18030BLSR3 datasheet(1/8 Pages) FREESCALE

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MRF18030BLR3 MRF18030BLSR3

1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for GSM and EDGE base station applications with frequencies

from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier

amplifier applications. Specified for GSM 1930-1990 MHz.

• Typical GSM Performance:

Power Gain - 14 dB (Typ) @ 30 Watts

Efficiency - 50% (Typ) @ 30 Watts

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 Watts CW Output Power

Features

• Internally Matched for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Low Gold Plating Thickness on Leads, 40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 32 mm,13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

VDSS

- 0.5, +65

Vdc

Gate-Source Voltage

VGS

- 0.5, +15

Vdc

Total Device Dissipation @ TC = 25°C

Derate above 25°C

PD

83.3

0.48

W

W/°C

Storage Temperature Range

Tstg

- 65 to +150

°C

Case Operating Temperature

TC

150

°C

Operating Junction Temperature

TJ

200

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

RθJC

2.1

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

2 (Minimum)

Machine Model

M3 (Minimum)

Document Number: MRF18030B

Rev. 7, 5/2006

Freescale Semiconductor

Technical Data

MRF18030BLR3

MRF18030BLSR3

1930-1990 MHz, 30 W, 26 V

GSM/GSM EDGE

LATERAL N-CHANNEL

RF POWER MOSFETs

CASE 465E-04, STYLE 1

NI-400

MRF18030BLR3

CASE 465F-04, STYLE 1

NI-400S

MRF18030BLSR3

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