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M16C/62 bảng dữ liệu(PDF) 54 Page - Renesas Technology Corp |
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M16C/62 bảng dữ liệu(HTML) 54 Page - Renesas Technology Corp |
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54 / 87 page ![]() VCC1 = VCC2 = 3V M16C/62 Group (M16C/62P, M16C/62PT) 5. Electrical Characteristics (M16C/62P) 4 8 f o 3 0 0 2 , 7 0 . v o N 0 1 . 2 . v e R page 54 Table 5.31 Electrical Characteristics (2) (1) Symbol Standard Typ. Unit Measuring condition Min.Max. Parameter No division mA In single-chip mode, the output pins are open and other pins are VSS 8 11 f(BCLK)=10MHz, No division mA f(BCLK)=10MHz, Mask ROM 13 Flash memory mA 1.8 mA 1 No division, Ring oscillation ICC Power supply current (VCC1=2.7 to 3.6V) Topr=25 °C 3.0 µA Stop mode, f(BCLK)=32kHz, Wait mode (2), Oscillation capacity High 6.0 µA 0.7 1.8 µA Mask ROM Flash memory NOTES: 1. Referenced to VCC1=VCC2=2.7 to 3.3V, VSS=0V at Topr = -20 to 85 °C / -40 to 85 °C, f(BCLK)=10MHz unless otherwise specified. 2. With one timer operated using fC32. 3. This indicates the memory in which the program to be executed exists. 4. Idet is dissipation current when the following bit is set to “1” (detection circuit enabled). Idet4: VC27 bit of VCR2 register Idet3: VC26 bit of VCR2 register Idet2: VC25 bit of VCR2 register Wait mode µA Low power dissipation mode, ROM (3) f(XCIN)=32kHz, µA Mask ROM Low power dissipation mode, RAM (3) f(BCLK)=32kHz, 420 µA Low power dissipation mode, Flash memory (3) f(BCLK)=32kHz, µA Flash memory 25 Ring oscillation, 45 25 f(BCLK)=32kHz, Wait mode (2), Oscillation capacity Low Idet4 Voltage down detection dissipation current (4) 4 µA 0.6 Idet3 Reset level detection dissipation current (4) 2 µA 0.4 Idet2 RAM retention limit detection dissipation current (4) 4 µA 0.9 No division, Ring oscillation 8 Vcc1=3.0V mA Flash memory 12 f(BCLK)=10MHz, Program Vcc1=3.0V mA Flash memory 22 f(BCLK)=10MHz, Erase |
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