Nexperia

74LVC10A

Triple 3-input NAND gate

10. Dynamic characteristics

Table 7. Dynamic characteristics

Voltages are referenced to GND (ground = 0 V). For test circuit see Fig. 7.

-40 °C to +85 °C

-40 °C to +125 °C

Symbol Parameter

Conditions

Min

Typ[1]

Max

Min

Max

Unit

nA, nB, nC to nY; see Fig. 6

[2]

VCC = 1.2 V

-

13

-

-

-

ns

VCC = 1.65 V to 1.95 V

0.5

4.5

11.2

0.5

12.9

ns

VCC = 2.3 V to 2.7 V

1.0

2.7

6.3

1.0

7.4

ns

VCC = 2.7 V

1.5

2.8

6.7

1.5

7.8

ns

tpd

propagation delay

VCC = 3.0 V to 3.6 V

1.5

2.4

5.7

1.5

6.6

ns

per gate; VI = GND to VCC

[3]

VCC = 1.65 V to 1.95 V

-

2.9

-

-

-

pF

VCC = 2.3 V to 2.7 V

-

6.0

-

-

-

pF

CPD

power dissipation

capacitance

VCC = 3.0 V to 3.6 V

-

8.8

-

-

-

pF

[1] Typical values are measured at Tamb = 25 °C and VCC = 1.2 V, 1.8 V, 2.5 V, 2.7 V, and 3.3 V respectively.

[2] tpd is the same as tPLH and tPHL.

[3] CPD is used to determine the dynamic power dissipation (PD in μW).

PD = CPD x VCC 2 x fi x N + Σ(CL x VCC 2 x fo) where:

fi = input frequency in MHz; fo = output frequency in MHz

CL = output load capacitance in pF

VCC = supply voltage in Volts

N = number of inputs switching

Σ(CL x VCC 2 x fo) = sum of the outputs

74LVC10A

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© Nexperia B.V. 2021. All rights reserved

Product data sheet

Rev. 6 — 15 April 2021

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