PXAE261908NF-V1-R5 datasheet(1/9 Pages) WOLFSPEED

tên linh kiện	PXAE261908NF-V1-R5

Giải thích chi tiết về linh kiện	Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 2515 – 2675 MHz

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nhà sản xuất	WOLFSPEED [WOLFSPEED, INC.]

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Rev. 0

4, 2023-07-24

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

PXAE261908NF

Package PG-HBSOF-6-3

Thermally-Enhanced High Power RF LDMOS FET

240 W, 28 V, 2515 – 2675 MHz

Features

• Broadband internal input and output matching

• Asymmetric Doherty design

- Main: P3dB = 90 W typical

- Peak: P3dB = 180 W typical

• Typical pulsed CW performance, 2675 MHz, 28 V

- Output power at P1dB = 51 W

- Output power at P3dB = 240 W

- Gain = 11.8 dB

- Efficiency = 60%

• Capable of handling 10:1 VSWR at 28 V, 32 W (CW)

output power

• Integrated ESD protection

• Human Body Model, Class 2 (per ANSI/ESDA/JEDEC

JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant

Description

The PXAE261908NF is a 240-watt (P3dB) LDMOS FET intended for use in

multi-standard cellular power amplifier applications in the 2515 to 2675

MHz frequency band. Features include input and output matching, high

gain and a thermally-enhanced package with earless flange. Manufactured

with Wolfspeed's advanced LDMOS process, this device provides excellent

thermal performance and superior reliability.

PXAE261908NF

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture)

VDD = 28 V, IDQ = 450 mA, VGS(PEAK) = 1.5 V, POUT = 32 W avg, ƒ = 2675 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average =

10 dB @ 0.01% CCDF

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

12.8

13.5

—

dB

Drain Efficiency

hD

45

47.5

—

%

Adjacent Channel Power Ratio

ACPR

—

–28

–26

dBc

Output PAR at 0.01% probability on CCDF

OPAR

7.6

8

—

dB

-60

-40

-20

0

20

40

60

0

4

8

12

16

20

24

25

30

35

40

45

50

55

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 28 V, IDQ = 450 mA,

VGS(PEAK) = 1.5 V, ƒ = 2675 MHz

3GPP WCDMA signal,

10 dB PAR, 3.84 MHz bandwidth

Gain

Efficiency

PAR @ 0.01% CCDF

pxae261908nf-gr1a

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Cree, Inc	PXAE263708NB	289Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 400 W (P3dB), 28 V, 2620 ??2690 MHz
WOLFSPEED, INC.	PXAE263708NB	612Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 400 W (P3dB), 28 V, 2620 – 2690 MHz Rev. 04, 2023-06-23
Cree, Inc	PXAE263708NB-V1-R2	289Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 400 W (P3dB), 28 V, 2620 ??2690 MHz
WOLFSPEED, INC.	PXAE263708NB-V1-R2	612Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 400 W (P3dB), 28 V, 2620 – 2690 MHz Rev. 04, 2023-06-23

More results

Mô tả tương tự - PXAE261908NF-V1-R5

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Infineon Technologies A...	PTFA142401EL	449Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 1450 ??1500 MHz Rev. 04, 2009-07-16
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WOLFSPEED, INC.	PTFC210202FC-V1	828Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Rev. 06, 2023-06-28
WOLFSPEED, INC.	GTRA260502M	762Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 2515 – 2675 MHz Rev. 04. 2023-06-26

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